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Simulation studies of a β-SiC on insulator Pockels phase modulator

Simulation studies of a β-SiC on insulator Pockels phase modulator
Simulation studies of a β-SiC on insulator Pockels phase modulator
We have designed waveguide modulators using β-SiC-on-insulator waveguides and the Pockels effect. A 2D semiconductor device simulator was used to determine the electric field configuration in a double-Schottky diode structure. This allowed us to evaluate the local modulation of the refractive index as a function of applied external bias and to determine the effective index modulation of the guided mode. The optical simulations were performed using the Spectral Index and the Effective Index methods. Different 2D geometries are analyzed and the material parameters needed for fabricating such a device are determined. Application to Mach-Zehnder intensity modulators is described. Such devices have potential for high-speed Si-based photonic devices compatible with silicon technology.
Vonsovici, A.
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Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Evans, A.G.R.
c4a3f208-8fd9-491d-870f-ce7eef943311
Vonsovici, A.
a400a2ee-0560-40e0-8d7f-648d18ecbbdf
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Evans, A.G.R.
c4a3f208-8fd9-491d-870f-ce7eef943311

Vonsovici, A., Reed, G.T. and Evans, A.G.R. (1999) Simulation studies of a β-SiC on insulator Pockels phase modulator. In Proceedings of SPIE Photonics West - Conference on Silicon-based Optoelectronics, San Jose CA, 23-29 Jan 1999.

Record type: Conference or Workshop Item (Paper)

Abstract

We have designed waveguide modulators using β-SiC-on-insulator waveguides and the Pockels effect. A 2D semiconductor device simulator was used to determine the electric field configuration in a double-Schottky diode structure. This allowed us to evaluate the local modulation of the refractive index as a function of applied external bias and to determine the effective index modulation of the guided mode. The optical simulations were performed using the Spectral Index and the Effective Index methods. Different 2D geometries are analyzed and the material parameters needed for fabricating such a device are determined. Application to Mach-Zehnder intensity modulators is described. Such devices have potential for high-speed Si-based photonic devices compatible with silicon technology.

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Published date: 23 January 1999
Venue - Dates: SPIE Photonics West - Conference on Silicon-based Optoelectronics: SPIE Photonics West, , San Jose, United States, 1999-01-23 - 1999-01-29
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252702
URI: http://eprints.soton.ac.uk/id/eprint/252702
PURE UUID: 1058dfe0-ee53-4b0f-b8c0-b06319b86341

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Date deposited: 08 May 2000
Last modified: 20 Jan 2021 17:32

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