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Fabrication of Silicon blazed gratings for couplers

Fabrication of Silicon blazed gratings for couplers
Fabrication of Silicon blazed gratings for couplers
To our knowledge, no blazed grating has been fabricated in silicon (Si) at a pitch of less than half a micron. In this article, we report the fabrication of Si-blazed gratings at the period of 400 nm, using electron beam lithography and ion beam etching techniques. The blazed grating is extremely useful as a grating coupler in integrated optics, operating at the telecommunication wavelength of 1.3 µm, because very high output efficiency of the grating coupler is expected. This will allow coupling to thin film devices in silicon, previously not regarded as promising because coupling to them was very inefficient.
Taylor & Francis
Ang, T.W.
39b01065-853c-44df-b089-17831a326efe
Vonsovici, A.
a400a2ee-0560-40e0-8d7f-648d18ecbbdf
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Evans, A.G.R.
c4a3f208-8fd9-491d-870f-ce7eef943311
Routley, P.R.
f4d380d9-54c2-4e4d-8eb8-d8ce26bca987
Josey, M.R.
8e0dadcf-4df3-43ff-9cab-cb7810cd7025
Ang, T.W.
39b01065-853c-44df-b089-17831a326efe
Vonsovici, A.
a400a2ee-0560-40e0-8d7f-648d18ecbbdf
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Evans, A.G.R.
c4a3f208-8fd9-491d-870f-ce7eef943311
Routley, P.R.
f4d380d9-54c2-4e4d-8eb8-d8ce26bca987
Josey, M.R.
8e0dadcf-4df3-43ff-9cab-cb7810cd7025

Ang, T.W., Vonsovici, A., Reed, G.T., Evans, A.G.R., Routley, P.R. and Josey, M.R. (2000) Fabrication of Silicon blazed gratings for couplers. (doi:10.1080/014680300244486).

Record type: Other

Abstract

To our knowledge, no blazed grating has been fabricated in silicon (Si) at a pitch of less than half a micron. In this article, we report the fabrication of Si-blazed gratings at the period of 400 nm, using electron beam lithography and ion beam etching techniques. The blazed grating is extremely useful as a grating coupler in integrated optics, operating at the telecommunication wavelength of 1.3 µm, because very high output efficiency of the grating coupler is expected. This will allow coupling to thin film devices in silicon, previously not regarded as promising because coupling to them was very inefficient.

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More information

Published date: 2000
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252706
URI: https://eprints.soton.ac.uk/id/eprint/252706
PURE UUID: 7fafe176-2ff8-4606-83f4-61e2c3f6440f

Catalogue record

Date deposited: 08 May 2000
Last modified: 05 Oct 2018 12:11

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Contributors

Author: T.W. Ang
Author: A. Vonsovici
Author: G.T. Reed
Author: A.G.R. Evans
Author: P.R. Routley
Author: M.R. Josey

University divisions

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