Riley, L S, Hall, S, Harris, J, Fernandez, J, Gallas, B, Evans, A G R, Clarke, J F, Humphry, J, Murray, R T and Jeynes, C (2000) SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation. Microelectronic Engineering, 48.
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Published date: 15 March 2000
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252720
URI: http://eprints.soton.ac.uk/id/eprint/252720
ISSN: 0167-9317
PURE UUID: a4f9011d-53ea-4fae-8820-aa48e2686151
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Date deposited: 15 Mar 2000
Last modified: 09 Apr 2024 09:50
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Contributors
Author:
L S Riley
Author:
S Hall
Author:
J Harris
Author:
J Fernandez
Author:
B Gallas
Author:
A G R Evans
Author:
J F Clarke
Author:
J Humphry
Author:
R T Murray
Author:
C Jeynes
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