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SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation

SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation
SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation
0167-9317
Riley, L S
82011a14-5eda-47b0-a928-f23f218d5457
Hall, S
f4a3297d-bb12-404d-9a02-f082ba4cbfb0
Harris, J
8c4ac81a-9e49-4cb1-b41f-54b70a34f260
Fernandez, J
fd370c85-2db7-4786-b71f-9c9675f6fa32
Gallas, B
68b98889-e783-4095-92b4-b29847fd2838
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Clarke, J F
2716edb0-196f-4308-820e-2c8e6c59100d
Humphry, J
65a433ea-5bc1-42de-87ee-e38868b0f420
Murray, R T
a4d8f6ea-690b-4d21-aa65-a35f3bdaeb1d
Jeynes, C
838ab9ab-998e-4eb0-ab12-89fc97df3caf
Riley, L S
82011a14-5eda-47b0-a928-f23f218d5457
Hall, S
f4a3297d-bb12-404d-9a02-f082ba4cbfb0
Harris, J
8c4ac81a-9e49-4cb1-b41f-54b70a34f260
Fernandez, J
fd370c85-2db7-4786-b71f-9c9675f6fa32
Gallas, B
68b98889-e783-4095-92b4-b29847fd2838
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Clarke, J F
2716edb0-196f-4308-820e-2c8e6c59100d
Humphry, J
65a433ea-5bc1-42de-87ee-e38868b0f420
Murray, R T
a4d8f6ea-690b-4d21-aa65-a35f3bdaeb1d
Jeynes, C
838ab9ab-998e-4eb0-ab12-89fc97df3caf

Riley, L S, Hall, S, Harris, J, Fernandez, J, Gallas, B, Evans, A G R, Clarke, J F, Humphry, J, Murray, R T and Jeynes, C (2000) SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation. Microelectronic Engineering, 48.

Record type: Article

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More information

Published date: 15 March 2000
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252720
URI: http://eprints.soton.ac.uk/id/eprint/252720
ISSN: 0167-9317
PURE UUID: a4f9011d-53ea-4fae-8820-aa48e2686151

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Date deposited: 15 Mar 2000
Last modified: 09 Apr 2024 09:50

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Contributors

Author: L S Riley
Author: S Hall
Author: J Harris
Author: J Fernandez
Author: B Gallas
Author: A G R Evans
Author: J F Clarke
Author: J Humphry
Author: R T Murray
Author: C Jeynes

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