SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation


Riley, L S, Hall, S, Harris, J, Fernandez, J, Gallas, B, Evans, A G R, Clarke, J F, Humphry, J, Murray, R T and Jeynes, C (2000) SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 252720
Date :
Date Event
15 March 2000Published
Date Deposited: 15 Mar 2000
Last Modified: 17 Apr 2017 23:30
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252720

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