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SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation

Riley, L S, Hall, S, Harris, J, Fernandez, J, Gallas, B, Evans, A G R, Clarke, J F, Humphry, J, Murray, R T and Jeynes, C (2000) SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation

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Published date: 15 March 2000
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 252720
PURE UUID: a4f9011d-53ea-4fae-8820-aa48e2686151

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Date deposited: 15 Mar 2000
Last modified: 18 Jul 2017 10:02

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Author: L S Riley
Author: S Hall
Author: J Harris
Author: J Fernandez
Author: B Gallas
Author: A G R Evans
Author: J F Clarke
Author: J Humphry
Author: R T Murray
Author: C Jeynes

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