Reduction of l/f noise in Polysilicon Emitter Bipolar Transistors
Reduction of l/f noise in Polysilicon Emitter Bipolar Transistors
Siabi-Shahrivar, N
c44c0070-13d6-4311-a647-ce75fb649416
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kemhadjian, H A
a60ec87d-ecf4-4417-928f-2f9b5918242b
1994
Siabi-Shahrivar, N
c44c0070-13d6-4311-a647-ce75fb649416
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kemhadjian, H A
a60ec87d-ecf4-4417-928f-2f9b5918242b
Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Kemhadjian, H A
(1994)
Reduction of l/f noise in Polysilicon Emitter Bipolar Transistors.
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Published date: 1994
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252779
URI: http://eprints.soton.ac.uk/id/eprint/252779
PURE UUID: b5aa9e06-fa91-47d1-a706-e9ee815a6f13
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Date deposited: 20 Mar 2000
Last modified: 10 Dec 2021 20:29
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Contributors
Author:
N Siabi-Shahrivar
Author:
W Redman-White
Author:
H A Kemhadjian
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