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Reduction of l/f noise in Polysilicon Emitter Bipolar Transistors

Reduction of l/f noise in Polysilicon Emitter Bipolar Transistors
Reduction of l/f noise in Polysilicon Emitter Bipolar Transistors
Siabi-Shahrivar, N
c44c0070-13d6-4311-a647-ce75fb649416
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kemhadjian, H A
a60ec87d-ecf4-4417-928f-2f9b5918242b
Siabi-Shahrivar, N
c44c0070-13d6-4311-a647-ce75fb649416
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kemhadjian, H A
a60ec87d-ecf4-4417-928f-2f9b5918242b

Siabi-Shahrivar, N, Redman-White, W, Ashburn, P and Kemhadjian, H A (1994) Reduction of l/f noise in Polysilicon Emitter Bipolar Transistors.

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More information

Published date: 1994
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252779
URI: http://eprints.soton.ac.uk/id/eprint/252779
PURE UUID: b5aa9e06-fa91-47d1-a706-e9ee815a6f13

Catalogue record

Date deposited: 20 Mar 2000
Last modified: 10 Dec 2021 20:29

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Contributors

Author: N Siabi-Shahrivar
Author: W Redman-White
Author: P Ashburn
Author: H A Kemhadjian

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