Afshar-Hanaii, N., Bonar, J.M., Evans, A.G.R., Starbuck, C.M.K., Parker, G.J. and Kemhadjian, H.A. (1991) Thick selective epitaxial growth of silicon at 960º C using silane only. ESSDERC '91: 21st European Solid State Device Research Conference, , Montreaux, Switzerland. 19 Dec 1991.
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Published date: 1991
Venue - Dates:
ESSDERC '91: 21st European Solid State Device Research Conference, , Montreaux, Switzerland, 1991-12-19 - 1991-12-19
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252794
URI: http://eprints.soton.ac.uk/id/eprint/252794
PURE UUID: df16a4b2-f8c8-4e48-9154-830828d17769
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Date deposited: 21 Mar 2000
Last modified: 12 Dec 2021 03:21
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Contributors
Author:
N. Afshar-Hanaii
Author:
J.M. Bonar
Author:
A.G.R. Evans
Author:
C.M.K. Starbuck
Author:
G.J. Parker
Author:
H.A. Kemhadjian
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