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Thick selective epitaxial growth of silicon at 960 deg C using silane only

Afshar-Hanaee, N, Bonar, J M, Evans, A G R, Starbuck, C M K, Parker, G J and Kemhadjian, H A (1991) Thick selective epitaxial growth of silicon at 960 deg C using silane only

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Published date: 1991
Additional Information: Organisation: ESSDERC
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 252794
PURE UUID: df16a4b2-f8c8-4e48-9154-830828d17769

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Date deposited: 21 Mar 2000
Last modified: 18 Jul 2017 10:02

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Author: N Afshar-Hanaee
Author: J M Bonar
Author: A G R Evans
Author: C M K Starbuck
Author: G J Parker
Author: H A Kemhadjian

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