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Thick selective epitaxial growth of silicon at 960º C using silane only

Thick selective epitaxial growth of silicon at 960º C using silane only
Thick selective epitaxial growth of silicon at 960º C using silane only
Afshar-Hanaii, N.
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Bonar, J.M.
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Evans, A.G.R.
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Starbuck, C.M.K.
a85acc65-f4ee-46aa-a608-817d9993f8fd
Parker, G.J.
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Kemhadjian, H.A.
a60ec87d-ecf4-4417-928f-2f9b5918242b
Afshar-Hanaii, N.
4d2530df-e7b7-4f3f-ac49-9afe1787e1b9
Bonar, J.M.
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Evans, A.G.R.
c4a3f208-8fd9-491d-870f-ce7eef943311
Starbuck, C.M.K.
a85acc65-f4ee-46aa-a608-817d9993f8fd
Parker, G.J.
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Kemhadjian, H.A.
a60ec87d-ecf4-4417-928f-2f9b5918242b

Afshar-Hanaii, N., Bonar, J.M., Evans, A.G.R., Starbuck, C.M.K., Parker, G.J. and Kemhadjian, H.A. (1991) Thick selective epitaxial growth of silicon at 960º C using silane only. ESSDERC '91: 21st European Solid State Device Research Conference, Montreaux, Switzerland. 19 Dec 1991.

Record type: Conference or Workshop Item (Other)

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More information

Published date: 1991
Venue - Dates: ESSDERC '91: 21st European Solid State Device Research Conference, Montreaux, Switzerland, 1991-12-19 - 1991-12-19
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252794
URI: https://eprints.soton.ac.uk/id/eprint/252794
PURE UUID: df16a4b2-f8c8-4e48-9154-830828d17769

Catalogue record

Date deposited: 21 Mar 2000
Last modified: 18 Dec 2018 17:30

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Contributors

Author: N. Afshar-Hanaii
Author: J.M. Bonar
Author: A.G.R. Evans
Author: C.M.K. Starbuck
Author: G.J. Parker
Author: H.A. Kemhadjian

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