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Thick selective epitaxial growth of silicon at 960 deg C using silane only

Record type: Other

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Citation

Afshar-Hanaee, N, Bonar, J M, Evans, A G R, Starbuck, C M K, Parker, G J and Kemhadjian, H A (1991) Thick selective epitaxial growth of silicon at 960 deg C using silane only

More information

Published date: 1991
Additional Information: Organisation: ESSDERC
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252794
URI: http://eprints.soton.ac.uk/id/eprint/252794
PURE UUID: df16a4b2-f8c8-4e48-9154-830828d17769

Catalogue record

Date deposited: 21 Mar 2000
Last modified: 18 Jul 2017 10:02

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Contributors

Author: N Afshar-Hanaee
Author: J M Bonar
Author: A G R Evans
Author: C M K Starbuck
Author: G J Parker
Author: H A Kemhadjian

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