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Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 0.1MGy capability

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Citation

Harris, R, Ensell, G J and Brunnschweiler, A (1993) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 0.1MGy capability

More information

Published date: September 1993
Additional Information: ESSDERC '93 Conference Proceedings of the 23rd European Solid State Device Research Conference, Grenoble, France.
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252810
URI: http://eprints.soton.ac.uk/id/eprint/252810
PURE UUID: 2066b253-aaec-4f06-b83b-d7feb56a9e15

Catalogue record

Date deposited: 23 Mar 2000
Last modified: 18 Jul 2017 10:01

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Contributors

Author: R Harris
Author: G J Ensell
Author: A Brunnschweiler

University divisions


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