Harris, R, Brunnschweiler, A and Ensell, G J (1994) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 120 kGy capability.
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Published date: September 1994
Additional Information:
Eurosensors VIII Conference , Tolouse, France.
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252812
URI: http://eprints.soton.ac.uk/id/eprint/252812
PURE UUID: 0e6de80a-4927-4ff5-97a1-84e38797e86d
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Date deposited: 23 Mar 2000
Last modified: 10 Dec 2021 20:29
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Contributors
Author:
R Harris
Author:
A Brunnschweiler
Author:
G J Ensell
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