Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 120 kGy capability


Harris, R, Brunnschweiler, A and Ensell, G J (1994) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 120 kGy capability

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Item Type: Other
Additional Information: Eurosensors VIII Conference , Tolouse, France.
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 252812
Date :
Date Event
September 1994Published
Date Deposited: 23 Mar 2000
Last Modified: 17 Apr 2017 23:29
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252812

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