Harris, R, Brunnschweiler, A and Ensell, G J (1994) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 120KGy capability.
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Published date: July 1994
Additional Information:
IEEE NSREC '94 Tuscon, Arizona.
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252813
URI: http://eprints.soton.ac.uk/id/eprint/252813
PURE UUID: c779882a-8d67-4a8d-9822-88e0111ff6e5
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Date deposited: 23 Mar 2000
Last modified: 10 Dec 2021 20:29
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Contributors
Author:
R Harris
Author:
A Brunnschweiler
Author:
G J Ensell
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