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Fabrication of improved piezoresistive silicon cantilever probe for the atomic force microscope

Fabrication of improved piezoresistive silicon cantilever probe for the atomic force microscope
Fabrication of improved piezoresistive silicon cantilever probe for the atomic force microscope
This paper describes an improved design for a monolithic silicon atomic force microscope (AFM) probe using piezoresistive sensing. The probe is V shaped, with a sharp tip at the free end and two piezoresistors at the root, and is fabricated using silicon-on-insulator (SOI) starting material. The maximum sensitivity of the AFM probe is measured to be 4.0(± 0.1) × 10-7 Å-1, which is larger than that of the previous parallel-arm piezoresistive AFM probe. The measured results are in reasonable agreement with the values predicted by theory. The minimum detectable force and minimum detectable deflection of the AFM probes are predicted to be 1.0 × 10-10 N and 0.29 Å r.m.s., respectively, using a Wheatstone bridge arrangement biased at a voltage of ± 5 V and bandwidth of 10 Hz – 1kHz.
0924-4247
163-167
Su, Y.
d9db9af4-ecb1-497f-ba4c-f11afbc2a934
Evans, Alan G.R.
493cd0b0-4509-4ad2-9d58-f3533fe47672
Brunnschweiler, A.
2d39ef7c-b95e-476c-b435-316b6618a565
Ensell, Graham J.
736a04bf-1a14-42c2-928b-ed7af799cd3a
Koch, M.
e40267ab-ad55-409c-9727-3dd53de47374
Su, Y.
d9db9af4-ecb1-497f-ba4c-f11afbc2a934
Evans, Alan G.R.
493cd0b0-4509-4ad2-9d58-f3533fe47672
Brunnschweiler, A.
2d39ef7c-b95e-476c-b435-316b6618a565
Ensell, Graham J.
736a04bf-1a14-42c2-928b-ed7af799cd3a
Koch, M.
e40267ab-ad55-409c-9727-3dd53de47374

Su, Y., Evans, Alan G.R., Brunnschweiler, A., Ensell, Graham J. and Koch, M. (1997) Fabrication of improved piezoresistive silicon cantilever probe for the atomic force microscope. Sensors and Actuators A: Physical, 60 (1-3), 163-167. (doi:10.1016/S0924-4247(96)01416-1).

Record type: Article

Abstract

This paper describes an improved design for a monolithic silicon atomic force microscope (AFM) probe using piezoresistive sensing. The probe is V shaped, with a sharp tip at the free end and two piezoresistors at the root, and is fabricated using silicon-on-insulator (SOI) starting material. The maximum sensitivity of the AFM probe is measured to be 4.0(± 0.1) × 10-7 Å-1, which is larger than that of the previous parallel-arm piezoresistive AFM probe. The measured results are in reasonable agreement with the values predicted by theory. The minimum detectable force and minimum detectable deflection of the AFM probes are predicted to be 1.0 × 10-10 N and 0.29 Å r.m.s., respectively, using a Wheatstone bridge arrangement biased at a voltage of ± 5 V and bandwidth of 10 Hz – 1kHz.

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More information

Accepted/In Press date: 1996
Published date: May 1997
Venue - Dates: Eurosensors X, , Leuven, Belgium, 1996-09-08 - 1996-09-11
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252820
URI: http://eprints.soton.ac.uk/id/eprint/252820
ISSN: 0924-4247
PURE UUID: f4985844-447a-4a91-b745-82e79be74f5f

Catalogue record

Date deposited: 23 Mar 2000
Last modified: 09 Nov 2021 16:09

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Contributors

Author: Y. Su
Author: Alan G.R. Evans
Author: A. Brunnschweiler
Author: Graham J. Ensell
Author: M. Koch

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