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The fabrication of a partial SOI substrate

The fabrication of a partial SOI substrate
The fabrication of a partial SOI substrate
Garner, D M
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Ensell, G J
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Bonar, J
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Blackburn, A
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Udrea, F
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Lim, H T
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Popescu, A
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Hemment, P L F
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Milne, W I
f0f1ecc1-8eb9-449d-ab96-f196c1a5e40c
Garner, D M
b97aa0fc-757e-4345-ad91-c58031befb40
Ensell, G J
05e24f49-3922-4e5f-9aee-1e6078650579
Bonar, J
3f58966b-f947-4843-8625-c0569145506c
Blackburn, A
bcee4783-8ea6-45cf-9f19-219b6e846bab
Udrea, F
2b9bce79-d629-4473-a186-eb18ad21c203
Lim, H T
f055df2a-8a9c-4ea6-b224-cfb62768dc7d
Popescu, A
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Hemment, P L F
94618b9c-dba6-4cf6-b4d9-8770e7081532
Milne, W I
f0f1ecc1-8eb9-449d-ab96-f196c1a5e40c

Garner, D M, Ensell, G J, Bonar, J, Blackburn, A, Udrea, F, Lim, H T, Popescu, A, Hemment, P L F and Milne, W I (1999) The fabrication of a partial SOI substrate.

Record type: Other

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More information

Published date: 1999
Additional Information: Proceedings of the ninth international symposium on silicon-on-insulator technology and devices. Chapter: 54
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252829
URI: http://eprints.soton.ac.uk/id/eprint/252829
PURE UUID: 86f8b9b3-7885-48f1-a1dd-9b7aca4b4cf1

Catalogue record

Date deposited: 23 Mar 2000
Last modified: 22 Sep 2020 16:44

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