Bonar, J M and Parker, G J (2000) The Epitaxial Quality of Silicon Grown by LPCVD as a Function of Ex-Situ Wafer Preparation.
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Published date: 24 March 2000
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252833
URI: http://eprints.soton.ac.uk/id/eprint/252833
PURE UUID: 208385b4-8fa6-4bf2-8edd-ea6acaf85cbb
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Date deposited: 24 Mar 2000
Last modified: 29 Jan 2020 15:14
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Contributors
Author:
J M Bonar
Author:
G J Parker
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