The Epitaxial Quality of Silicon Grown by LPCVD as a Function of Ex-Situ Wafer Preparation.


Bonar, J M and Parker, G J (2000) The Epitaxial Quality of Silicon Grown by LPCVD as a Function of Ex-Situ Wafer Preparation.

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 252833
Date :
Date Event
24 March 2000Published
Date Deposited: 24 Mar 2000
Last Modified: 17 Apr 2017 23:29
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252833

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