LPCVD SiGe for Heterojunction Bipolar Transistors
LPCVD SiGe for Heterojunction Bipolar Transistors
Parker, G J
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Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bonar, J M
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Gregory, H J
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Kennedy, G P
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Hamel, J S
e88aa687-c9b8-40f9-8e41-a28f4559c6a8
February 1995
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Kennedy, G P
7ee93f16-26f5-403e-9574-d22c48b69810
Hamel, J S
e88aa687-c9b8-40f9-8e41-a28f4559c6a8
Parker, G J, Ashburn, P, Bonar, J M, Gregory, H J, Kennedy, G P and Hamel, J S
(1995)
LPCVD SiGe for Heterojunction Bipolar Transistors.
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Published date: February 1995
Additional Information:
Organisation: IEE Colloquium on Advanced MOS and Bipolar Devices 14th February 1995, London
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252848
URI: http://eprints.soton.ac.uk/id/eprint/252848
PURE UUID: 0955e24e-b92c-40a8-92de-2b96f8f02359
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Date deposited: 24 Mar 2000
Last modified: 10 Dec 2021 20:29
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Contributors
Author:
G J Parker
Author:
J M Bonar
Author:
H J Gregory
Author:
G P Kennedy
Author:
J S Hamel
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