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Regrowth behaviour of SiGe/Si structures formed by Ge+ Ion implantation and post amorphisation

Regrowth behaviour of SiGe/Si structures formed by Ge+ Ion implantation and post amorphisation
Regrowth behaviour of SiGe/Si structures formed by Ge+ Ion implantation and post amorphisation
Zhang, J.R.
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Wilson, R.J.
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Hemment, P.L.F.
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Claverie, A.
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Cristiano, F.
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Salles, P.
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Wen, J.Q.
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Evans, J.H.
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Peaker, A.R.
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Parker, G.J.
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Zhang, J.R.
cab0d6db-ae25-4da3-b8b0-e330b7cc1035
Wilson, R.J.
69a755c3-e55d-47b5-8e88-c0265a1502ff
Hemment, P.L.F.
94618b9c-dba6-4cf6-b4d9-8770e7081532
Claverie, A.
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Cristiano, F.
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Salles, P.
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Wen, J.Q.
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Evans, J.H.
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Peaker, A.R.
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Parker, G.J.
b140c5a5-94c4-44f3-95a3-c5054a9fe38d

Zhang, J.R., Wilson, R.J., Hemment, P.L.F., Claverie, A., Cristiano, F., Salles, P., Wen, J.Q., Evans, J.H., Peaker, A.R. and Parker, G.J. (1993) Regrowth behaviour of SiGe/Si structures formed by Ge+ Ion implantation and post amorphisation.

Record type: Other

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More information

Published date: 1993
Additional Information: Organisation: E-MRS 1993 Spring Meeting, Symposium GIV.6.
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252849
URI: http://eprints.soton.ac.uk/id/eprint/252849
PURE UUID: 4dd57157-e656-41d2-b750-4a108e7af943

Catalogue record

Date deposited: 24 Mar 2000
Last modified: 10 Apr 2019 16:36

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Contributors

Author: J.R. Zhang
Author: R.J. Wilson
Author: P.L.F. Hemment
Author: A. Claverie
Author: F. Cristiano
Author: P. Salles
Author: J.Q. Wen
Author: J.H. Evans
Author: A.R. Peaker
Author: G.J. Parker

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