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Dopant Profiling of Silicon using Electrochemical Capacitance-Voltage Measurements

Dopant Profiling of Silicon using Electrochemical Capacitance-Voltage Measurements
Dopant Profiling of Silicon using Electrochemical Capacitance-Voltage Measurements
Johnston, I R
dd992ee6-85bc-4adf-b044-a80dde74f65b
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Johnston, I R
dd992ee6-85bc-4adf-b044-a80dde74f65b
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d

Johnston, I R and Parker, G J (1996) Dopant Profiling of Silicon using Electrochemical Capacitance-Voltage Measurements.

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More information

Published date: September 1996
Additional Information: Organisation: Engineering Materials Post Graduate Conference, Chilworth Manor, Southampton 16 - 17 September 1996
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252855
URI: http://eprints.soton.ac.uk/id/eprint/252855
PURE UUID: a160fcb0-533e-46f8-8883-bdd452c40778

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Date deposited: 24 Mar 2000
Last modified: 10 Dec 2021 20:30

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Contributors

Author: I R Johnston
Author: G J Parker

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