Bonar, J M and Parker, G J (1996) Selective Si and SiGe Epitaxy Growth by LPCVD without the use of Chlorinated Source Gases.
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Published date: April 1996
Additional Information:
Organisation: 1996 Spring Meeting of the Materials Research Society San Francisco, CA 8 - 12 April 1996
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 252857
URI: http://eprints.soton.ac.uk/id/eprint/252857
PURE UUID: 15dfc103-426b-43bd-96af-77216f566eeb
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Date deposited: 24 Mar 2000
Last modified: 10 Dec 2021 20:30
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Author:
J M Bonar
Author:
G J Parker
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