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Selective Si and SiGe Epitaxy Growth by LPCVD without the use of Chlorinated Source Gases

Selective Si and SiGe Epitaxy Growth by LPCVD without the use of Chlorinated Source Gases
Selective Si and SiGe Epitaxy Growth by LPCVD without the use of Chlorinated Source Gases
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d

Bonar, J M and Parker, G J (1996) Selective Si and SiGe Epitaxy Growth by LPCVD without the use of Chlorinated Source Gases.

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More information

Published date: April 1996
Additional Information: Organisation: 1996 Spring Meeting of the Materials Research Society San Francisco, CA 8 - 12 April 1996
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252857
URI: http://eprints.soton.ac.uk/id/eprint/252857
PURE UUID: 15dfc103-426b-43bd-96af-77216f566eeb

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Date deposited: 24 Mar 2000
Last modified: 10 Dec 2021 20:30

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Contributors

Author: J M Bonar
Author: G J Parker

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