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Fabrication of free-standing single-crystal silicon wires

Fabrication of free-standing single-crystal silicon wires
Fabrication of free-standing single-crystal silicon wires
A fabrication process for free-standing single-crystal silicon wires of submicrometer cross-sectional dimensions and lengths in excess of 40 µm is reported. The starting material is silicon-on-insulator that has been recrystallized using a dual electron beam recrystallizing system. The wires are then fabricated in the recrystallized layer by a combination of electron beam lithography and plasma etching. Electrical measurements have been performed and the fabrication limits of the process are discussed.
0003-6951
834-835
Potts, A
a3c70ecc-a6ad-4a82-b871-0303479b1020
Hasko, D G
81358284-248d-4ab4-9c6b-3728494e550e
Cleaver, J R A
8f983ee2-5bc4-4044-9993-88db7fa6ce09
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf
Potts, A
a3c70ecc-a6ad-4a82-b871-0303479b1020
Hasko, D G
81358284-248d-4ab4-9c6b-3728494e550e
Cleaver, J R A
8f983ee2-5bc4-4044-9993-88db7fa6ce09
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf

Potts, A, Hasko, D G, Cleaver, J R A and Ahmed, H. (1988) Fabrication of free-standing single-crystal silicon wires. Applied Physics Letters, 52 (10), 834-835.

Record type: Article

Abstract

A fabrication process for free-standing single-crystal silicon wires of submicrometer cross-sectional dimensions and lengths in excess of 40 µm is reported. The starting material is silicon-on-insulator that has been recrystallized using a dual electron beam recrystallizing system. The wires are then fabricated in the recrystallized layer by a combination of electron beam lithography and plasma etching. Electrical measurements have been performed and the fabrication limits of the process are discussed.

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More information

Published date: March 1988
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252878
URI: https://eprints.soton.ac.uk/id/eprint/252878
ISSN: 0003-6951
PURE UUID: 9c7149ae-4dc0-45c0-b051-f6c4df22546f

Catalogue record

Date deposited: 31 Mar 2000
Last modified: 18 Jul 2017 10:00

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Contributors

Author: A Potts
Author: D G Hasko
Author: J R A Cleaver
Author: H. Ahmed

University divisions

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