The University of Southampton
University of Southampton Institutional Repository

Fabrication of submicrometer free-standing single-crystal gallium arsenide and silicon

Fabrication of submicrometer free-standing single-crystal gallium arsenide and silicon
Fabrication of submicrometer free-standing single-crystal gallium arsenide and silicon
Freestanding wires of submicrometer width and with lengths up to 40 µm have been fabricated from single-crystal GaAs and Si for studies of quantum transport. Fabrication techniques are described, and the low-temperature properties for semiconductors and metals such as AuPd are compared. Fabrication of three-terminal freestanding metal-semiconductor field effect transistor structures is demonstrated.
1071-1023
1849-1851
Hasko, D G
81358284-248d-4ab4-9c6b-3728494e550e
Potts, A
a3c70ecc-a6ad-4a82-b871-0303479b1020
Cleaver, J R A
8f983ee2-5bc4-4044-9993-88db7fa6ce09
Smith, C G
4be792c6-be81-447a-98cf-d2fd8b800067
Ahmed, H
4ebe4b2e-14c1-406d-99a5-88ebc6202e9a
Hasko, D G
81358284-248d-4ab4-9c6b-3728494e550e
Potts, A
a3c70ecc-a6ad-4a82-b871-0303479b1020
Cleaver, J R A
8f983ee2-5bc4-4044-9993-88db7fa6ce09
Smith, C G
4be792c6-be81-447a-98cf-d2fd8b800067
Ahmed, H
4ebe4b2e-14c1-406d-99a5-88ebc6202e9a

Hasko, D G, Potts, A, Cleaver, J R A, Smith, C G and Ahmed, H (1988) Fabrication of submicrometer free-standing single-crystal gallium arsenide and silicon. Journal of Vacuum Science and Technology B, 6 (6), 1849-1851.

Record type: Article

Abstract

Freestanding wires of submicrometer width and with lengths up to 40 µm have been fabricated from single-crystal GaAs and Si for studies of quantum transport. Fabrication techniques are described, and the low-temperature properties for semiconductors and metals such as AuPd are compared. Fabrication of three-terminal freestanding metal-semiconductor field effect transistor structures is demonstrated.

Full text not available from this repository.

More information

Published date: November 1988
Additional Information: This paper was presented at the 32nd meeting of the Symposium on Electron, Ion and Photon Beams in June 1988 (EIPB88) in Fort Lauderdale, Florida USA.
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252879
URI: https://eprints.soton.ac.uk/id/eprint/252879
ISSN: 1071-1023
PURE UUID: b3d02997-515e-463e-bf46-cf9853c84616

Catalogue record

Date deposited: 31 Mar 2000
Last modified: 18 Jul 2017 10:00

Export record

Contributors

Author: D G Hasko
Author: A Potts
Author: J R A Cleaver
Author: C G Smith
Author: H Ahmed

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×