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Quantum conductivity corrections in free-standing and supported n+ GaAs wires

Quantum conductivity corrections in free-standing and supported n+ GaAs wires
Quantum conductivity corrections in free-standing and supported n+ GaAs wires
Low temperature electrical and magnetoresistance measurements have been performed on free-standing and supported wires of n-type GaAs doped to 1017 / cm3 over the temperature range 0.47 - 4.2 K. These wires were triangular in cross-section, with widths of 600 - 900 nm and lengths of 3.2 -10 µm. We report that the observed increase in the resistance for temperatures below 4.2 K can be interpreted as being due to a combination of weak localisation and 3D electron-electron interaction effects. We will also show how the results described here can be used as the basis for a determination of the phonon conductivity and dimensionality in free-standing structures.
0953-8984
1807-1815
Potts, A
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Hasko, D G
81358284-248d-4ab4-9c6b-3728494e550e
Cleaver, J R A
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Smith, C G
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Ahmed, H
4ebe4b2e-14c1-406d-99a5-88ebc6202e9a
Kelly, M J
6266062d-5df8-4523-aaea-4412f5914fc2
Frost, J E F
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Jones, G A C
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Peacock, D C
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Ritchie, D A
0d6e3fed-1a77-4057-972f-0422d9199a4a
Potts, A
a3c70ecc-a6ad-4a82-b871-0303479b1020
Hasko, D G
81358284-248d-4ab4-9c6b-3728494e550e
Cleaver, J R A
8f983ee2-5bc4-4044-9993-88db7fa6ce09
Smith, C G
4be792c6-be81-447a-98cf-d2fd8b800067
Ahmed, H
4ebe4b2e-14c1-406d-99a5-88ebc6202e9a
Kelly, M J
6266062d-5df8-4523-aaea-4412f5914fc2
Frost, J E F
d55aea1c-30a8-4359-93fc-cca2b1ca4c8d
Jones, G A C
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Peacock, D C
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Ritchie, D A
0d6e3fed-1a77-4057-972f-0422d9199a4a

Potts, A, Hasko, D G, Cleaver, J R A, Smith, C G, Ahmed, H, Kelly, M J, Frost, J E F, Jones, G A C, Peacock, D C and Ritchie, D A (1990) Quantum conductivity corrections in free-standing and supported n+ GaAs wires. Journal of Physics: Condensed Matter, 2 (7), 1807-1815.

Record type: Article

Abstract

Low temperature electrical and magnetoresistance measurements have been performed on free-standing and supported wires of n-type GaAs doped to 1017 / cm3 over the temperature range 0.47 - 4.2 K. These wires were triangular in cross-section, with widths of 600 - 900 nm and lengths of 3.2 -10 µm. We report that the observed increase in the resistance for temperatures below 4.2 K can be interpreted as being due to a combination of weak localisation and 3D electron-electron interaction effects. We will also show how the results described here can be used as the basis for a determination of the phonon conductivity and dimensionality in free-standing structures.

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More information

Published date: February 1990
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252880
URI: https://eprints.soton.ac.uk/id/eprint/252880
ISSN: 0953-8984
PURE UUID: ebc50b2c-08e3-4706-a7cb-d712b02a0911

Catalogue record

Date deposited: 30 Mar 2000
Last modified: 18 Jul 2018 16:31

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