Thermal transport in free-standing single-crystal GaAs wires
Thermal transport in free-standing single-crystal GaAs wires
Low temperature electrical and magnetoresistance measurements have been performed on free-standing wires of single-crystal n-type GaAs of length 3.2 µm and width 0.55 - 0.6 µm. In addition, electric field heating experiments have shown that the thermal conductivity, even for doping concentrations as low as 1017 cm-3, is dominated by the electronic contribution and can be adequately explained by invoking the Wiedemann-Franz law.
0-444-88182-4
15-18
Potts, A
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Kelly, M J
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Smith, C G
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Hasko, D G
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Cleaver, J R A
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Ahmed, H
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Peacock, D C
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Ritchie, D A
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Frost, J E F
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Jones, G A C
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Ahmed, H
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Cleaver, J R A
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Jones, G A C
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McMahon, R A
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Broers, A N
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April 1990
Potts, A
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Kelly, M J
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Smith, C G
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Hasko, D G
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Cleaver, J R A
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Ahmed, H
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Peacock, D C
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Ritchie, D A
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Frost, J E F
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Jones, G A C
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Ahmed, H
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Cleaver, J R A
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Jones, G A C
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McMahon, R A
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Broers, A N
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Potts, A, Kelly, M J, Smith, C G, Hasko, D G, Cleaver, J R A, Ahmed, H, Peacock, D C, Ritchie, D A, Frost, J E F and Jones, G A C
(1990)
Thermal transport in free-standing single-crystal GaAs wires.
Ahmed, H, Cleaver, J R A, Jones, G A C, McMahon, R A and Broers, A N
(eds.)
Microelectronic Engineering 89, Cambridge, United Kingdom.
25 - 27 Sep 1989.
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Low temperature electrical and magnetoresistance measurements have been performed on free-standing wires of single-crystal n-type GaAs of length 3.2 µm and width 0.55 - 0.6 µm. In addition, electric field heating experiments have shown that the thermal conductivity, even for doping concentrations as low as 1017 cm-3, is dominated by the electronic contribution and can be adequately explained by invoking the Wiedemann-Franz law.
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More information
Published date: April 1990
Additional Information:
This paper was presented in September 1989 at the Microcircuit Engineering Conference (ME89) in Cambridge, UK. Event Dates: 26-28 September 1989
Venue - Dates:
Microelectronic Engineering 89, Cambridge, United Kingdom, 1989-09-25 - 1989-09-27
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252882
URI: http://eprints.soton.ac.uk/id/eprint/252882
ISBN: 0-444-88182-4
PURE UUID: b6472eb6-b90c-44d0-a101-8b521449d259
Catalogue record
Date deposited: 30 Mar 2000
Last modified: 10 Dec 2021 20:30
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Contributors
Author:
A Potts
Author:
M J Kelly
Author:
C G Smith
Author:
D G Hasko
Author:
J R A Cleaver
Author:
H Ahmed
Author:
D C Peacock
Author:
D A Ritchie
Author:
J E F Frost
Author:
G A C Jones
Editor:
H Ahmed
Editor:
J R A Cleaver
Editor:
G A C Jones
Editor:
R A McMahon
Editor:
A N Broers
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