Thermal transport in free-standing single-crystal GaAs wires

Potts, A, Kelly, M J, Smith, C G, Hasko, D G, Cleaver, J R A, Ahmed, H, Peacock, D C, Ritchie, D A, Frost, J E F and Jones, G A C, (1990) Thermal transport in free-standing single-crystal GaAs wires Ahmed, H, Cleaver, J R A, Jones, G A C, McMahon, R A and Broers, A N (eds.) At Microelectronic Engineering 89, United Kingdom. 26 - 28 Sep 1989. , pp. 15-18.


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Low temperature electrical and magnetoresistance measurements have been performed on free-standing wires of single-crystal n-type GaAs of length 3.2 µm and width 0.55 - 0.6 µm. In addition, electric field heating experiments have shown that the thermal conductivity, even for doping concentrations as low as 10<SUP>17</SUP> cm<SUP>-3</SUP>, is dominated by the electronic contribution and can be adequately explained by invoking the Wiedemann-Franz law.

Item Type: Conference or Workshop Item (Paper)
Additional Information: This paper was presented in September 1989 at the Microcircuit Engineering Conference (ME89) in Cambridge, UK. Event Dates: 26-28 September 1989
Venue - Dates: Microelectronic Engineering 89, United Kingdom, 1989-09-26 - 1989-09-28
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 252882
Date :
Date Event
April 1990Published
Date Deposited: 30 Mar 2000
Last Modified: 17 Apr 2017 23:27
Further Information:Google Scholar

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