Potts, A, Kelly, M J, Smith, C G, Hasko, D G, Cleaver, J R A, Ahmed, H, Peacock, D C, Ritchie, D A, Frost, J E F and Jones, G A C,
Thermal transport in free-standing single-crystal GaAs wires
Ahmed, H, Cleaver, J R A, Jones, G A C, McMahon, R A and Broers, A N (eds.)
At Microelectronic Engineering 89, United Kingdom.
26 - 28 Sep 1989.
Full text not available from this repository.
Low temperature electrical and magnetoresistance measurements have been performed on free-standing wires of single-crystal n-type GaAs of length 3.2 µm and width 0.55 - 0.6 µm. In addition, electric field heating experiments have shown that the thermal conductivity, even for doping concentrations as low as 10<SUP>17</SUP> cm<SUP>-3</SUP>, is dominated by the electronic contribution and can be adequately explained by invoking the Wiedemann-Franz law.
Conference or Workshop Item
||This paper was presented in September 1989 at the Microcircuit Engineering Conference (ME89) in Cambridge, UK. Event Dates: 26-28 September 1989
|Venue - Dates:
||Microelectronic Engineering 89, United Kingdom, 1989-09-26 - 1989-09-28
||Nanoelectronics and Nanotechnology
||30 Mar 2000
||17 Apr 2017 23:27
|Further Information:||Google Scholar|
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