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Thermal transport in free-standing single-crystal GaAs wires

Potts, A, Kelly, M J, Smith, C G, Hasko, D G, Cleaver, J R A, Ahmed, H, Peacock, D C, Ritchie, D A, Frost, J E F and Jones, G A C, (1990) Thermal transport in free-standing single-crystal GaAs wires Ahmed, H, Cleaver, J R A, Jones, G A C, McMahon, R A and Broers, A N (eds.) At Microelectronic Engineering 89, United Kingdom. 26 - 28 Sep 1989. , pp. 15-18.

Record type: Conference or Workshop Item (Paper)


Low temperature electrical and magnetoresistance measurements have been performed on free-standing wires of single-crystal n-type GaAs of length 3.2 µm and width 0.55 - 0.6 µm. In addition, electric field heating experiments have shown that the thermal conductivity, even for doping concentrations as low as 10<SUP>17</SUP> cm<SUP>-3</SUP>, is dominated by the electronic contribution and can be adequately explained by invoking the Wiedemann-Franz law.

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Published date: April 1990
Additional Information: This paper was presented in September 1989 at the Microcircuit Engineering Conference (ME89) in Cambridge, UK. Event Dates: 26-28 September 1989
Venue - Dates: Microelectronic Engineering 89, United Kingdom, 1989-09-26 - 1989-09-28
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 252882
ISBN: 0-444-88182-4
PURE UUID: b6472eb6-b90c-44d0-a101-8b521449d259

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Date deposited: 30 Mar 2000
Last modified: 18 Jul 2017 10:00

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Author: A Potts
Author: M J Kelly
Author: C G Smith
Author: D G Hasko
Author: J R A Cleaver
Author: H Ahmed
Author: D C Peacock
Author: D A Ritchie
Author: J E F Frost
Author: G A C Jones
Editor: H Ahmed
Editor: J R A Cleaver
Editor: G A C Jones
Editor: R A McMahon
Editor: A N Broers

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