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Thermal transport in free-standing single-crystal GaAs wires

Thermal transport in free-standing single-crystal GaAs wires
Thermal transport in free-standing single-crystal GaAs wires
Low temperature electrical and magnetoresistance measurements have been performed on free-standing wires of single-crystal n-type GaAs of length 3.2 µm and width 0.55 - 0.6 µm. In addition, electric field heating experiments have shown that the thermal conductivity, even for doping concentrations as low as 1017 cm-3, is dominated by the electronic contribution and can be adequately explained by invoking the Wiedemann-Franz law.
0-444-88182-4
15-18
Potts, A
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Kelly, M J
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Smith, C G
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Hasko, D G
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Cleaver, J R A
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Ahmed, H
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Peacock, D C
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Ritchie, D A
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Frost, J E F
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Jones, G A C
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Ahmed, H
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Cleaver, J R A
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Jones, G A C
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McMahon, R A
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Broers, A N
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Potts, A
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Kelly, M J
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Smith, C G
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Hasko, D G
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Cleaver, J R A
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Ahmed, H
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Peacock, D C
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Ritchie, D A
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Frost, J E F
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Jones, G A C
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Ahmed, H
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Cleaver, J R A
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Jones, G A C
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McMahon, R A
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Broers, A N
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Potts, A, Kelly, M J, Smith, C G, Hasko, D G, Cleaver, J R A, Ahmed, H, Peacock, D C, Ritchie, D A, Frost, J E F and Jones, G A C (1990) Thermal transport in free-standing single-crystal GaAs wires. Ahmed, H, Cleaver, J R A, Jones, G A C, McMahon, R A and Broers, A N (eds.) Microelectronic Engineering 89, United Kingdom. 26 - 28 Sep 1989. pp. 15-18 .

Record type: Conference or Workshop Item (Paper)

Abstract

Low temperature electrical and magnetoresistance measurements have been performed on free-standing wires of single-crystal n-type GaAs of length 3.2 µm and width 0.55 - 0.6 µm. In addition, electric field heating experiments have shown that the thermal conductivity, even for doping concentrations as low as 1017 cm-3, is dominated by the electronic contribution and can be adequately explained by invoking the Wiedemann-Franz law.

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More information

Published date: April 1990
Additional Information: This paper was presented in September 1989 at the Microcircuit Engineering Conference (ME89) in Cambridge, UK. Event Dates: 26-28 September 1989
Venue - Dates: Microelectronic Engineering 89, United Kingdom, 1989-09-26 - 1989-09-28
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252882
URI: https://eprints.soton.ac.uk/id/eprint/252882
ISBN: 0-444-88182-4
PURE UUID: b6472eb6-b90c-44d0-a101-8b521449d259

Catalogue record

Date deposited: 30 Mar 2000
Last modified: 17 Jul 2018 16:31

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