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Fabrication of free-standing single-crystal silicon nanostructures for the study of thermal transport and defect scattering in low dimensional systems

Fabrication of free-standing single-crystal silicon nanostructures for the study of thermal transport and defect scattering in low dimensional systems
Fabrication of free-standing single-crystal silicon nanostructures for the study of thermal transport and defect scattering in low dimensional systems
Free-standing wire samples have been fabricated that enable low dimensional conducting wires to be examined by transmission electron microscopy (TEM). These structures have been fabricated using a combination of gas-assisted ion beam etching and electron beam lithography, and have cross-sectional dimensions between 70 nm and 1.0 µm, and lengths of up to 50 µm. The free-standing wires have been examined by TEM before and after ion implantation and annealing. The results indicate that no extended defects are created in the wires, even for high doses (10<SUP>16</SUP> cm<SUP>-3</SUP>) or high beam energies ( > 50 keV). The reason for this is not fully understood. In addition, the fabrication process has been extended so that low temperature electrical measurements can be performed on the TEM samples. In this way it is hoped eventually to study the role of specific crystalline defects in limiting the electronic and phonon transport.
0021-4922
2675-2679
Potts, A
a3c70ecc-a6ad-4a82-b871-0303479b1020
Williams, D A
eff27f62-d14b-45ba-873b-3f05cdc40f02
Young, R J
fd92d86e-8aee-4b65-86ff-11a62ac033d8
Blaikie, R J
cc2569c1-1d3e-40e7-94d4-a5ff1ec49486
McMahon, R A
77f19a4a-1105-4d3f-b30d-a3768b44d14f
Hasko, D G
81358284-248d-4ab4-9c6b-3728494e550e
Cleaver, J R A
8f983ee2-5bc4-4044-9993-88db7fa6ce09
Ahmed, H
4ebe4b2e-14c1-406d-99a5-88ebc6202e9a
Potts, A
a3c70ecc-a6ad-4a82-b871-0303479b1020
Williams, D A
eff27f62-d14b-45ba-873b-3f05cdc40f02
Young, R J
fd92d86e-8aee-4b65-86ff-11a62ac033d8
Blaikie, R J
cc2569c1-1d3e-40e7-94d4-a5ff1ec49486
McMahon, R A
77f19a4a-1105-4d3f-b30d-a3768b44d14f
Hasko, D G
81358284-248d-4ab4-9c6b-3728494e550e
Cleaver, J R A
8f983ee2-5bc4-4044-9993-88db7fa6ce09
Ahmed, H
4ebe4b2e-14c1-406d-99a5-88ebc6202e9a

Potts, A, Williams, D A, Young, R J, Blaikie, R J, McMahon, R A, Hasko, D G, Cleaver, J R A and Ahmed, H (1990) Fabrication of free-standing single-crystal silicon nanostructures for the study of thermal transport and defect scattering in low dimensional systems Japanese Journal of Applied Physics, 29, (11), pp. 2675-2679.

Record type: Article

Abstract

Free-standing wire samples have been fabricated that enable low dimensional conducting wires to be examined by transmission electron microscopy (TEM). These structures have been fabricated using a combination of gas-assisted ion beam etching and electron beam lithography, and have cross-sectional dimensions between 70 nm and 1.0 µm, and lengths of up to 50 µm. The free-standing wires have been examined by TEM before and after ion implantation and annealing. The results indicate that no extended defects are created in the wires, even for high doses (10<SUP>16</SUP> cm<SUP>-3</SUP>) or high beam energies ( > 50 keV). The reason for this is not fully understood. In addition, the fabrication process has been extended so that low temperature electrical measurements can be performed on the TEM samples. In this way it is hoped eventually to study the role of specific crystalline defects in limiting the electronic and phonon transport.

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More information

Published date: November 1990
Venue - Dates: conference; 1990-11-01, 1990-11-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252883
URI: http://eprints.soton.ac.uk/id/eprint/252883
ISSN: 0021-4922
PURE UUID: 791d5b3a-48ec-4064-a460-90d824345e2b

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Date deposited: 30 Mar 2000
Last modified: 18 Jul 2017 10:00

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Contributors

Author: A Potts
Author: D A Williams
Author: R J Young
Author: R J Blaikie
Author: R A McMahon
Author: D G Hasko
Author: J R A Cleaver
Author: H Ahmed

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