Thermal transport in free-standing semiconductor fine wires

Potts, A., Kelly, M. J., Hasko, D. G., Smith, C. G., Cleaver, J. R. A., Ahmed, H., Peacock, D. C., Frost, J. E. F., Ritchie, D. A., Jones, G. A. C., Singleton, J. and Janssen, T. J. B. M. (1991) Thermal transport in free-standing semiconductor fine wires Superlattices and Microstructures, 9, (3), pp. 315-318.


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The effects of electron heating in free-standing n<SUP>+</SUP> GaAs wires have been studied over the temperature range 0.45 K - 4.2 K. The results indicate that for low lattice temperatures and heating currents the thermal transport in the wires is dominated by the electronic contribution. However, for lattice temperatures above 1 K, an additional contribution to the thermal conductivity is observed that cannot be accounted for by the Wiedemann-Franz law.

Item Type: Article
Additional Information: Paper presented at the 5th International Conference on Superlattices and Microstructures, East Berlin, G.D.R. (August 1990) (satellite meeting to the 20th International Conference on the Physics of Semiconductors, Thessaloniki, Greece 1990).
ISSNs: 1096-3677 (print)
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 252885
Date :
Date Event
Date Deposited: 30 Mar 2000
Last Modified: 17 Apr 2017 23:28
Further Information:Google Scholar

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