Potts, A, Kelly, M J, Hasko, D G, Cleaver, J R A, Ahmed, H, Ritchie, D A, Frost, J E F and Jones, G A C
Lattice heating of freestanding ultra-fine GaAs wires by hot-electrons
Semiconductor Science and Technology, 7, (3B), .
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We extend our previous studies of the heating by DC electric fields of submicron-diameter free-standing wires of doped GaAs at low lattice temperatures. For lower fields, equivalent to sub-nanowatt dissipated power in our samples, all thermal processes could be accounted for in terms of electron heating alone. We consider here the regime where the hot electrons deposit some of their excess energy into the host lattice, we extract a characteristic electron-phonon scattering length that is an appreciable fraction of the sample length, and we provide evidence for ballistic transport.
||Paper presented at the 7th International Conference on Hot Carriers in Semiconductors, Nara, Japan (July 01-05 1991)
||Nanoelectronics and Nanotechnology
||23 Mar 2006
||17 Apr 2017 23:28
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