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Quasi-one dimensional transport in semiconductor microstructures

Quasi-one dimensional transport in semiconductor microstructures
Quasi-one dimensional transport in semiconductor microstructures
We describe some of the physics peculiar to electron transport in quasi-one-dimensional systems in semiconductors, with particular reference to three systems in which it has been investigated: ultra-fine free-standing wires of doped GaAs, the split-gate high-electron-mobility transistor (with and without a back-gate to vary the carrier concentration), and vertical quantum pillars fabricated from multiple-barrier heterostructure material. They are all electron waveguide structures, characterised by < 0.1 µm feature sizes in two of the three spatial dimensions, and they all exhibit phenomena quite different from those seen in macroscopic semiconductor structures. We try to identify the subset of this physics that may be exploitable, and comment on the more general relevance of this new physics to devices.
0031-8949
200-205
Kelly, M J
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Potts, A
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Hamilton, A
35422311-5c0d-4522-bae9-864eafa0dc25
Tewordt, M
d6d5bb07-49ce-4ea6-857a-6f27ec01d788
Pepper, M
549c69c3-2c9d-47f3-be59-76eed01d6072
Law, V J
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Frost, J E F
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Ritchie, D A
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Jones, G A C
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Hasko, D G
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Ahmed, H
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Kelly, M J
6266062d-5df8-4523-aaea-4412f5914fc2
Potts, A
a3c70ecc-a6ad-4a82-b871-0303479b1020
Hamilton, A
35422311-5c0d-4522-bae9-864eafa0dc25
Tewordt, M
d6d5bb07-49ce-4ea6-857a-6f27ec01d788
Pepper, M
549c69c3-2c9d-47f3-be59-76eed01d6072
Law, V J
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Frost, J E F
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Ritchie, D A
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Jones, G A C
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Hasko, D G
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Ahmed, H
4ebe4b2e-14c1-406d-99a5-88ebc6202e9a

Kelly, M J, Potts, A, Hamilton, A, Tewordt, M, Pepper, M, Law, V J, Frost, J E F, Ritchie, D A, Jones, G A C, Hasko, D G and Ahmed, H (1992) Quasi-one dimensional transport in semiconductor microstructures. Physica Scripta, T45, 200-205.

Record type: Article

Abstract

We describe some of the physics peculiar to electron transport in quasi-one-dimensional systems in semiconductors, with particular reference to three systems in which it has been investigated: ultra-fine free-standing wires of doped GaAs, the split-gate high-electron-mobility transistor (with and without a back-gate to vary the carrier concentration), and vertical quantum pillars fabricated from multiple-barrier heterostructure material. They are all electron waveguide structures, characterised by < 0.1 µm feature sizes in two of the three spatial dimensions, and they all exhibit phenomena quite different from those seen in macroscopic semiconductor structures. We try to identify the subset of this physics that may be exploitable, and comment on the more general relevance of this new physics to devices.

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More information

Published date: 1992
Additional Information: This was an invited paper presented at the 12th General Conference of the Condensed Matter Division of the European Physical Society. PRAGUE, CZECHOSLOVAKIA, APR 06-09, 1992 Event Dates: April 06-09, 1992
Venue - Dates: 12th General Conference of the Condensed Matter Division of the European Physical Society, 1992-04-06 - 1992-04-09
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252889
URI: https://eprints.soton.ac.uk/id/eprint/252889
ISSN: 0031-8949
PURE UUID: 4d4796e0-713a-41c0-8d2c-da44bbbc1c2b

Catalogue record

Date deposited: 23 Mar 2006
Last modified: 18 Jul 2017 10:01

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