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Quasi-one dimensional transport in semiconductor microstructures

Kelly, M J, Potts, A, Hamilton, A, Tewordt, M, Pepper, M, Law, V J, Frost, J E F, Ritchie, D A, Jones, G A C, Hasko, D G and Ahmed, H (1992) Quasi-one dimensional transport in semiconductor microstructures Physica Scripta, T45, pp. 200-205.

Record type: Article


We describe some of the physics peculiar to electron transport in quasi-one-dimensional systems in semiconductors, with particular reference to three systems in which it has been investigated: ultra-fine free-standing wires of doped GaAs, the split-gate high-electron-mobility transistor (with and without a back-gate to vary the carrier concentration), and vertical quantum pillars fabricated from multiple-barrier heterostructure material. They are all electron waveguide structures, characterised by < 0.1 µm feature sizes in two of the three spatial dimensions, and they all exhibit phenomena quite different from those seen in macroscopic semiconductor structures. We try to identify the subset of this physics that may be exploitable, and comment on the more general relevance of this new physics to devices.

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Published date: 1992
Additional Information: This was an invited paper presented at the 12th General Conference of the Condensed Matter Division of the European Physical Society. PRAGUE, CZECHOSLOVAKIA, APR 06-09, 1992 Event Dates: April 06-09, 1992
Venue - Dates: 12th General Conference of the Condensed Matter Division of the European Physical Society, 1992-04-06 - 1992-04-09
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 252889
ISSN: 0031-8949
PURE UUID: 4d4796e0-713a-41c0-8d2c-da44bbbc1c2b

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Date deposited: 23 Mar 2006
Last modified: 18 Jul 2017 10:01

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Author: M J Kelly
Author: A Potts
Author: A Hamilton
Author: M Tewordt
Author: M Pepper
Author: V J Law
Author: J E F Frost
Author: D A Ritchie
Author: G A C Jones
Author: D G Hasko
Author: H Ahmed

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