Magnetization studies of Landau level broadening in two-dimensional electron system
Magnetization studies of Landau level broadening in two-dimensional electron system
We have used a torque magnetometer to measure de Haas-van Alphen oscillations in the magnetization of two-dimensional electrons in GaAs/AlGaAs heterostructures and multiple quantum well systems for temperatures ranging from 0.125 K to 4.2 K and in magnetic fields of up to 15 T. Our results indicate that for high magnetic fields the density of states can be described by a series of Lorentzian broadened Landau levels with a broadening that is independent of the magnetic field, B, and Landau level index, n. However, at low magnetic fields the Lorentzian broadened density of states becomes indistinguishable from a Gaussian one with a broadening that is proportional to B½. The high field behaviour of the Landau level line-shape is shown to differ appreciably from the low field case as reported by other workers using both magnetization and other experimental methods. The reliability of this and other experimental techniques is discussed.
5189-5207
Potts, A
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Shepherd, R
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Herrenden-Harker, W G
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Elliott, M
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Jones, C L
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Usher, A
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Jones, G A C
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Ritchie, D A
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Linfield, E H
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Grimshaw, M
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July 1996
Potts, A
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Shepherd, R
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Herrenden-Harker, W G
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Elliott, M
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Jones, C L
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Usher, A
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Jones, G A C
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Ritchie, D A
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Linfield, E H
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Grimshaw, M
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Potts, A, Shepherd, R, Herrenden-Harker, W G, Elliott, M, Jones, C L, Usher, A, Jones, G A C, Ritchie, D A, Linfield, E H and Grimshaw, M
(1996)
Magnetization studies of Landau level broadening in two-dimensional electron system.
Journal of Physics: Condensed Matter, 8 (28), .
Abstract
We have used a torque magnetometer to measure de Haas-van Alphen oscillations in the magnetization of two-dimensional electrons in GaAs/AlGaAs heterostructures and multiple quantum well systems for temperatures ranging from 0.125 K to 4.2 K and in magnetic fields of up to 15 T. Our results indicate that for high magnetic fields the density of states can be described by a series of Lorentzian broadened Landau levels with a broadening that is independent of the magnetic field, B, and Landau level index, n. However, at low magnetic fields the Lorentzian broadened density of states becomes indistinguishable from a Gaussian one with a broadening that is proportional to B½. The high field behaviour of the Landau level line-shape is shown to differ appreciably from the low field case as reported by other workers using both magnetization and other experimental methods. The reliability of this and other experimental techniques is discussed.
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Published date: July 1996
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252892
URI: http://eprints.soton.ac.uk/id/eprint/252892
ISSN: 0953-8984
PURE UUID: 34e3d98d-04e9-4d90-ae3e-69e7b04d9017
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Date deposited: 30 Mar 2000
Last modified: 08 Jan 2022 11:45
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Contributors
Author:
A Potts
Author:
R Shepherd
Author:
W G Herrenden-Harker
Author:
M Elliott
Author:
C L Jones
Author:
A Usher
Author:
G A C Jones
Author:
D A Ritchie
Author:
E H Linfield
Author:
M Grimshaw
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