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LPCVD Growth of Silicon-Germanium for Device Applications

LPCVD Growth of Silicon-Germanium for Device Applications
LPCVD Growth of Silicon-Germanium for Device Applications
0854325255
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Hamel, J S
e88aa687-c9b8-40f9-8e41-a28f4559c6a8
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Hamel, J S
e88aa687-c9b8-40f9-8e41-a28f4559c6a8
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Bonar, J M, Parker, G J, Hamel, J S and Ashburn, P (1994) LPCVD Growth of Silicon-Germanium for Device Applications.

Record type: Other

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More information

Published date: 1994
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252967
URI: https://eprints.soton.ac.uk/id/eprint/252967
ISBN: 0854325255
PURE UUID: decbdec2-8734-4fbf-837c-c28b75e3f419

Catalogue record

Date deposited: 14 Apr 2000
Last modified: 18 Jul 2017 10:00

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