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A ΣΔ modulator with extended supply voltages in 0.8µm SOI CMOS for direct ground-referred instrumentation interfacing

A ΣΔ modulator with extended supply voltages in 0.8µm SOI CMOS for direct ground-referred instrumentation interfacing
A ΣΔ modulator with extended supply voltages in 0.8µm SOI CMOS for direct ground-referred instrumentation interfacing
Until recently, SOI technology has been seen as only useful for its survivability in harsh environments such as radiation and high temperatures. However, the total device isolation has other benefits. In this paper we present a ΣΔ modulator aimed at a modest instrumentation specification which uses SOI technology to allow bipolar input signals above and below ground to be applied directly to the input pin, thereby eliminating level shifting circuitry from the transducer interface. At the same time, the device gives a conventional 0-5V or 0-3.3V logic output from the same die. Potential issues with anomalous SOI device behaviour are identified at the design stage with specific device models, and electro-thermal simulation of key cells is employed to highlight any significant problems. The design is realised in a 0.8mm radiation-hard 5V CMOS -SOI process, and runs from supplies of ±2.5V (analogue) and +5V (digital) down to ±1.5V and +3V.
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Easson, C.
57204798-a21e-4028-8524-5baa14bc5ec3
Benson, J.
0424524d-1f0f-4299-b270-4f969841ba0a
Rabe, R.L.
f8add399-f800-432f-8241-70a72818b88d
Uren, M.J.
a01d904d-14a4-42f0-a027-631e4e37d4bf
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Easson, C.
57204798-a21e-4028-8524-5baa14bc5ec3
Benson, J.
0424524d-1f0f-4299-b270-4f969841ba0a
Rabe, R.L.
f8add399-f800-432f-8241-70a72818b88d
Uren, M.J.
a01d904d-14a4-42f0-a027-631e4e37d4bf

Redman-White, W, Easson, C., Benson, J., Rabe, R.L. and Uren, M.J. (1999) A ΣΔ modulator with extended supply voltages in 0.8µm SOI CMOS for direct ground-referred instrumentation interfacing. European Solid-State Circuits Conference, Duisburg, Germany. 21 - 23 Sep 1999. (In Press)

Record type: Conference or Workshop Item (Other)

Abstract

Until recently, SOI technology has been seen as only useful for its survivability in harsh environments such as radiation and high temperatures. However, the total device isolation has other benefits. In this paper we present a ΣΔ modulator aimed at a modest instrumentation specification which uses SOI technology to allow bipolar input signals above and below ground to be applied directly to the input pin, thereby eliminating level shifting circuitry from the transducer interface. At the same time, the device gives a conventional 0-5V or 0-3.3V logic output from the same die. Potential issues with anomalous SOI device behaviour are identified at the design stage with specific device models, and electro-thermal simulation of key cells is employed to highlight any significant problems. The design is realised in a 0.8mm radiation-hard 5V CMOS -SOI process, and runs from supplies of ±2.5V (analogue) and +5V (digital) down to ±1.5V and +3V.

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More information

Accepted/In Press date: September 1999
Additional Information: Organisation: Proc European Solid State Circuits Conference, Duisberg
Venue - Dates: European Solid-State Circuits Conference, Duisburg, Germany, 1999-09-21 - 1999-09-23
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252989
URI: https://eprints.soton.ac.uk/id/eprint/252989
PURE UUID: 444b8377-7afe-425d-b038-4fb10c75c472

Catalogue record

Date deposited: 19 Apr 2000
Last modified: 03 Jul 2018 16:31

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