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A multi bit modulator in floating body silicon-on-sapphire for extreme radiation environments

A multi bit modulator in floating body silicon-on-sapphire for extreme radiation environments
A multi bit modulator in floating body silicon-on-sapphire for extreme radiation environments
This paper presents the design of an experimental first-order modulator with 4 quantization, fabricated in a 1.5-um space-qualified radiation-hard partially depleted sapphire (SOS) digital CMOS process. This converter architecture has been chosen investigation into the design of a range of common analog functions with two key one of technology and one environmental. First, both the architecture and the circ optimized using a variety of unconventional techniques to account for the influence bias-dependent, radiation-induced threshold-voltage shifts of up to 1V, as well as noise. Second, the circuitry is specially adapted to accommodate the floating-body type of process, wherein drain conductance varies considerably with drain bias and design techniques are directly applicable to very large-scale-integration silicon-on-design, where similar device phsics are encountered. Notwithstanding the severe the design, the fabricated circuit provides 9.7 bits of dynamic range in a 63-kHz si only degrading to 9.1 bits after 23 Mrad(Si) of total dose radiation.
937-948
Edwards, C F
abf3541b-e757-47ca-a5dd-3a6e65e75d5d
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Bracey, M
4833eff3-612c-4368-b038-64ea56a258e1
Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Lee, M S
65bae80b-acae-48d4-a9e5-0f2c0c558688
Uren, M J
a01d904d-14a4-42f0-a027-631e4e37d4bf
Edwards, C F
abf3541b-e757-47ca-a5dd-3a6e65e75d5d
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Bracey, M
4833eff3-612c-4368-b038-64ea56a258e1
Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Lee, M S
65bae80b-acae-48d4-a9e5-0f2c0c558688
Uren, M J
a01d904d-14a4-42f0-a027-631e4e37d4bf

Edwards, C F, Redman-White, W, Bracey, M, Tenbroek, B M, Lee, M S and Uren, M J (1999) A multi bit modulator in floating body silicon-on-sapphire for extreme radiation environments At Meeting, Netherlands. 22 - 24 Sep 1998. , pp. 937-948.

Record type: Conference or Workshop Item (Paper)

Abstract

This paper presents the design of an experimental first-order modulator with 4 quantization, fabricated in a 1.5-um space-qualified radiation-hard partially depleted sapphire (SOS) digital CMOS process. This converter architecture has been chosen investigation into the design of a range of common analog functions with two key one of technology and one environmental. First, both the architecture and the circ optimized using a variety of unconventional techniques to account for the influence bias-dependent, radiation-induced threshold-voltage shifts of up to 1V, as well as noise. Second, the circuitry is specially adapted to accommodate the floating-body type of process, wherein drain conductance varies considerably with drain bias and design techniques are directly applicable to very large-scale-integration silicon-on-design, where similar device phsics are encountered. Notwithstanding the severe the design, the fabricated circuit provides 9.7 bits of dynamic range in a 63-kHz si only degrading to 9.1 bits after 23 Mrad(Si) of total dose radiation.

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More information

Published date: September 1999
Additional Information: Event Dates: 22-24 September 1998 Organisation: Proc European Solid State Circuits Conference, The Hague, The Netherlands
Venue - Dates: Meeting, Netherlands, 1998-09-22 - 1998-09-24
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252991
URI: http://eprints.soton.ac.uk/id/eprint/252991
PURE UUID: 77ea2c69-9d16-414a-ac41-dc47ab4056a9

Catalogue record

Date deposited: 09 Sep 2004
Last modified: 18 Jul 2017 10:00

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Contributors

Author: C F Edwards
Author: W Redman-White
Author: M Bracey
Author: B M Tenbroek
Author: M S Lee
Author: M J Uren

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