A multi bit modulator in floating body silicon-on-sapphire for extreme radiation environments

Edwards, C. F., Redman-White, W., Bracey, M., Tenbroek, B. M., Lee, M. S. L. and Uren, M. J. (1999) A multi bit modulator in floating body silicon-on-sapphire for extreme radiation environments. European Solid State Circuits Conference, The Hague, The, Netherlands. 22 - 24 Sep 1998. pp. 937-948 . (doi:10.1109/ESSCIR.1998.186254).

Abstract

This paper presents the design of an experimental first-order modulator with 4 quantization, fabricated in a 1.5-µm space-qualified radiation-hard partially depleted sapphire (SOS) digital CMOS process. This converter architecture has been chosen investigation into the design of a range of common analog functions with two key one of technology and one environmental. First, both the architecture and the circ optimized using a variety of unconventional techniques to account for the influence bias-dependent, radiation-induced threshold-voltage shifts of up to 1V, as well as noise. Second, the circuitry is specially adapted to accommodate the floating-body type of process, wherein drain conductance varies considerably with drain bias and design techniques are directly applicable to very large-scale-integration silicon-on-design, where similar device physics are encountered. Notwithstanding the severe the design, the fabricated circuit provides 9.7 bits of dynamic range in a 63-kHz is only degrading to 9.1 bits after 23 Mrad(Si) of total dose radiation.

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