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Characterisation of geometry dependence of SOI MOSFET thermal resistance and capacitance parameters

Characterisation of geometry dependence of SOI MOSFET thermal resistance and capacitance parameters
Characterisation of geometry dependence of SOI MOSFET thermal resistance and capacitance parameters
Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Lee, M S L
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Redman-White, W
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Bunyan, R J T
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Uren, M J
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Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Lee, M S L
bafc771f-3562-4a77-a7cc-20326d2ba792
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Bunyan, R J T
d9a64ca6-7cb9-4eba-8afa-294fe386aed0
Uren, M J
a01d904d-14a4-42f0-a027-631e4e37d4bf

Tenbroek, B M, Lee, M S L, Redman-White, W, Bunyan, R J T and Uren, M J (1997) Characterisation of geometry dependence of SOI MOSFET thermal resistance and capacitance parameters.

Record type: Conference or Workshop Item (Other)

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More information

Published date: October 1997
Additional Information: Organisation: IEEE Silicon on Insulator Conference, California, USA
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252994
URI: http://eprints.soton.ac.uk/id/eprint/252994
PURE UUID: 01f3a18e-95ae-43f4-ae69-40c54bb5c84f

Catalogue record

Date deposited: 19 Apr 2000
Last modified: 10 Dec 2021 20:31

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Contributors

Author: B M Tenbroek
Author: M S L Lee
Author: W Redman-White
Author: R J T Bunyan
Author: M J Uren

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