Characterisation of geometry dependence of SOI MOSFET thermal resistance and capacitance parameters
Characterisation of geometry dependence of SOI MOSFET thermal resistance and capacitance parameters
Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Lee, M S L
bafc771f-3562-4a77-a7cc-20326d2ba792
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Bunyan, R J T
d9a64ca6-7cb9-4eba-8afa-294fe386aed0
Uren, M J
a01d904d-14a4-42f0-a027-631e4e37d4bf
October 1997
Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Lee, M S L
bafc771f-3562-4a77-a7cc-20326d2ba792
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Bunyan, R J T
d9a64ca6-7cb9-4eba-8afa-294fe386aed0
Uren, M J
a01d904d-14a4-42f0-a027-631e4e37d4bf
Tenbroek, B M, Lee, M S L, Redman-White, W, Bunyan, R J T and Uren, M J
(1997)
Characterisation of geometry dependence of SOI MOSFET thermal resistance and capacitance parameters.
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Published date: October 1997
Additional Information:
Organisation: IEEE Silicon on Insulator Conference, California, USA
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252994
URI: http://eprints.soton.ac.uk/id/eprint/252994
PURE UUID: 01f3a18e-95ae-43f4-ae69-40c54bb5c84f
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Date deposited: 19 Apr 2000
Last modified: 10 Dec 2021 20:31
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Contributors
Author:
B M Tenbroek
Author:
M S L Lee
Author:
W Redman-White
Author:
R J T Bunyan
Author:
M J Uren
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