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Comparison of SOI MOSFET self-heating measurements by gate resistance thermometry and small-signal drain admittance extraction

Record type: Conference or Workshop Item (Other)

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Citation

Tenbroek, B M, Redman-White, W, Lee, M S L and Uren, M J (1995) Comparison of SOI MOSFET self-heating measurements by gate resistance thermometry and small-signal drain admittance extraction

More information

Published date: October 1995
Additional Information: Organisation: Proc IEEE International SOI Conference, Tucson, AZ, USA
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 253003
URI: http://eprints.soton.ac.uk/id/eprint/253003
PURE UUID: b603ac23-a375-4f10-b313-10b3d396bf1d

Catalogue record

Date deposited: 19 Apr 2000
Last modified: 18 Jul 2017 10:00

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Contributors

Author: B M Tenbroek
Author: W Redman-White
Author: M S L Lee
Author: M J Uren

University divisions


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