Experimental validation of simple electrothermal circuit models for SOI MOSFETs using direct DC-UHF measurement of drain admittance
Experimental validation of simple electrothermal circuit models for SOI MOSFETs using direct DC-UHF measurement of drain admittance
Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Lee, M S L
bafc771f-3562-4a77-a7cc-20326d2ba792
Uren, M J
a01d904d-14a4-42f0-a027-631e4e37d4bf
September 1995
Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Lee, M S L
bafc771f-3562-4a77-a7cc-20326d2ba792
Uren, M J
a01d904d-14a4-42f0-a027-631e4e37d4bf
Tenbroek, B M, Redman-White, W, Lee, M S L and Uren, M J
(1995)
Experimental validation of simple electrothermal circuit models for SOI MOSFETs using direct DC-UHF measurement of drain admittance.
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Published date: September 1995
Additional Information:
Organisation: Proc European Solid State Device Research Conference, The Hague, The Netherlands
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 253006
URI: http://eprints.soton.ac.uk/id/eprint/253006
PURE UUID: 74e875bb-e58d-4370-8f5c-8c0499c96df5
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Date deposited: 19 Apr 2000
Last modified: 10 Dec 2021 20:31
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Contributors
Author:
B M Tenbroek
Author:
W Redman-White
Author:
M S L Lee
Author:
M J Uren
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