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Experimental validation of simple electrothermal circuit models for SOI MOSFETs using direct DC-UHF measurement of drain admittance

Experimental validation of simple electrothermal circuit models for SOI MOSFETs using direct DC-UHF measurement of drain admittance
Experimental validation of simple electrothermal circuit models for SOI MOSFETs using direct DC-UHF measurement of drain admittance
Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Lee, M S L
bafc771f-3562-4a77-a7cc-20326d2ba792
Uren, M J
a01d904d-14a4-42f0-a027-631e4e37d4bf
Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Lee, M S L
bafc771f-3562-4a77-a7cc-20326d2ba792
Uren, M J
a01d904d-14a4-42f0-a027-631e4e37d4bf

Tenbroek, B M, Redman-White, W, Lee, M S L and Uren, M J (1995) Experimental validation of simple electrothermal circuit models for SOI MOSFETs using direct DC-UHF measurement of drain admittance.

Record type: Conference or Workshop Item (Other)

Full text not available from this repository.

More information

Published date: September 1995
Additional Information: Organisation: Proc European Solid State Device Research Conference, The Hague, The Netherlands
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 253006
URI: https://eprints.soton.ac.uk/id/eprint/253006
PURE UUID: 74e875bb-e58d-4370-8f5c-8c0499c96df5

Catalogue record

Date deposited: 19 Apr 2000
Last modified: 18 Jul 2017 10:00

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