Frequency dependent small-signal drain characteristics in silicon-on-sapphire MOSFETs
Frequency dependent small-signal drain characteristics in silicon-on-sapphire MOSFETs
Howes, R.
e00663fa-4ea2-4ae1-bff5-4ac9078f492f
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
September 1991
Howes, R.
e00663fa-4ea2-4ae1-bff5-4ac9078f492f
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Howes, R. and Redman-White, W.
(1991)
Frequency dependent small-signal drain characteristics in silicon-on-sapphire MOSFETs.
In,
Proceedings of the European Solid State Device Research Conference.
European Solid State Device Research Conference (01/09/91)
Record type:
Book Section
This record has no associated files available for download.
More information
Published date: September 1991
Venue - Dates:
European Solid State Device Research Conference, , Montreux, Switzerland, 1991-09-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 253258
URI: http://eprints.soton.ac.uk/id/eprint/253258
PURE UUID: f9ea2a42-29a4-4e94-8a2e-177bd1999766
Catalogue record
Date deposited: 09 May 2000
Last modified: 12 Dec 2021 03:21
Export record
Contributors
Author:
R. Howes
Author:
W. Redman-White
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics