Frequency dependent small-signal drain characteristics in silcon-on-sapphire MOSFETs


Howes, R and Redman-White, W (1991) Frequency dependent small-signal drain characteristics in silcon-on-sapphire MOSFETs

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Item Type: Conference or Workshop Item (Other)
Additional Information: Organisation: Proc European Solid State Device Research Conference, Montreaux, Switzerland
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 253258
Date :
Date Event
September 1991Published
Date Deposited: 09 May 2000
Last Modified: 17 Apr 2017 23:25
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/253258

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