A multi-bit converter in floating body silicon on sapphire for extreme radiation environments
A multi-bit converter in floating body silicon on sapphire for extreme radiation environments
937-948
Edwards, C F
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Redman-White, W
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Bracey, M
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Tenbroek, B M
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Lee, M S L
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Uren, M J
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July 1999
Edwards, C F
abf3541b-e757-47ca-a5dd-3a6e65e75d5d
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Bracey, M
4833eff3-612c-4368-b038-64ea56a258e1
Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Lee, M S L
bafc771f-3562-4a77-a7cc-20326d2ba792
Uren, M J
a01d904d-14a4-42f0-a027-631e4e37d4bf
Edwards, C F, Redman-White, W, Bracey, M, Tenbroek, B M, Lee, M S L and Uren, M J
(1999)
A multi-bit converter in floating body silicon on sapphire for extreme radiation environments.
IEEE Journal of Solid-State Circuits, 39 (7), .
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More information
Published date: July 1999
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 253299
URI: http://eprints.soton.ac.uk/id/eprint/253299
PURE UUID: 66573377-5415-4c83-8861-f90b9bf0f94f
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Date deposited: 06 Sep 2004
Last modified: 10 Dec 2021 20:32
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Contributors
Author:
C F Edwards
Author:
W Redman-White
Author:
M Bracey
Author:
B M Tenbroek
Author:
M S L Lee
Author:
M J Uren
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