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Measurement of buried oxide thermal conductivity for accurate electrothermal simulation of SOI

Measurement of buried oxide thermal conductivity for accurate electrothermal simulation of SOI
Measurement of buried oxide thermal conductivity for accurate electrothermal simulation of SOI
Finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modelling of the thermal behaviour of silicon-on insulator (SOI) devices. There is uncertainty about the conductivity of different forms of SiO2, particularly that of buried oxides. This paper presents a novel approach to measure this conductivity, using structures that are compatible with standard bipolar or CMOS processes. Thermal conductivity values of 0.66 and 0.82 W/mK, respectively, were found for 300-nm BESOI and 420-nm SIMOX oxides at room temperature. The measured variations of thermal conducitivity with temperature agree well with bulk SiO2 behaviour. Better agreement between measurement and finite element simulation of MOSFET thermal resistance is obtained by using these extracted thermal conductivity values. It is also shown that the role of the silicon substrate in determining the thermal resistance of the device can be calculated using a simple analytical model. This is important when one wishes to calculate accurately individual thermal resistances of transistors in a given circuit.
251-253
Tenbroek, B. M.
321ed915-008d-4218-9564-57e061886804
Bunyan, R. J. T.
f87a3069-9adc-4e66-93ab-858ebb39045b
Whiting, G.
8930756c-c805-4283-b502-4f0676effb17
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Uren, M. J.
98cd13fc-b6fa-4126-8ef3-f5fc8be04710
Brunson, K.
8fd90400-d83b-4ee9-b3db-52ccff8bbd6b
Edwards, C. F.
71a5b071-582c-45d1-91a6-b50366b5c46c
Tenbroek, B. M.
321ed915-008d-4218-9564-57e061886804
Bunyan, R. J. T.
f87a3069-9adc-4e66-93ab-858ebb39045b
Whiting, G.
8930756c-c805-4283-b502-4f0676effb17
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Uren, M. J.
98cd13fc-b6fa-4126-8ef3-f5fc8be04710
Brunson, K.
8fd90400-d83b-4ee9-b3db-52ccff8bbd6b
Edwards, C. F.
71a5b071-582c-45d1-91a6-b50366b5c46c

Tenbroek, B. M., Bunyan, R. J. T., Whiting, G., Redman-White, W., Uren, M. J., Brunson, K. and Edwards, C. F. (1999) Measurement of buried oxide thermal conductivity for accurate electrothermal simulation of SOI. IEEE Transactions on Electron Devices, 46 (1), 251-253.

Record type: Article

Abstract

Finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modelling of the thermal behaviour of silicon-on insulator (SOI) devices. There is uncertainty about the conductivity of different forms of SiO2, particularly that of buried oxides. This paper presents a novel approach to measure this conductivity, using structures that are compatible with standard bipolar or CMOS processes. Thermal conductivity values of 0.66 and 0.82 W/mK, respectively, were found for 300-nm BESOI and 420-nm SIMOX oxides at room temperature. The measured variations of thermal conducitivity with temperature agree well with bulk SiO2 behaviour. Better agreement between measurement and finite element simulation of MOSFET thermal resistance is obtained by using these extracted thermal conductivity values. It is also shown that the role of the silicon substrate in determining the thermal resistance of the device can be calculated using a simple analytical model. This is important when one wishes to calculate accurately individual thermal resistances of transistors in a given circuit.

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More information

Published date: January 1999
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 253300
URI: https://eprints.soton.ac.uk/id/eprint/253300
PURE UUID: 11312367-9edc-4845-97f3-28c36190dc9e

Catalogue record

Date deposited: 09 Sep 2004
Last modified: 16 Jul 2019 23:05

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Contributors

Author: B. M. Tenbroek
Author: R. J. T. Bunyan
Author: G. Whiting
Author: W. Redman-White
Author: M. J. Uren
Author: K. Brunson
Author: C. F. Edwards

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