The Effect of Body Contact Series Resistance on SOI CMOS Amplifier stages
The Effect of Body Contact Series Resistance on SOI CMOS Amplifier stages
This paper examines some implications for analogue design of using body ties as a solution to the problem of floating body effects in partially-depleted (PD) SOI technologies. Measurements on H-gate body-tied structures in a 0.7-µm SOI process indicate body-tie series resistances increasing into the M region. Both circuit simulation and measurement results reveal a delayed but sharper kink effect as this resistance increases. The consequences of this effect are shown in the context of a simple amplifier configuration, resulting in severe bias-dependent degradation in the small signal gain characteristics as the body-tie resistance enters the M region. It is deduced that imperfectly body tied devices may be worse for analogue design than using non body-tie at all.
2290-2294
Edwards, C. F.
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Redman-White, W.
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Tenbroek, B. M.
321ed915-008d-4218-9564-57e061886804
Lee, M. S. L.
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Uren, M. J.
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December 1997
Edwards, C. F.
71a5b071-582c-45d1-91a6-b50366b5c46c
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Tenbroek, B. M.
321ed915-008d-4218-9564-57e061886804
Lee, M. S. L.
6460a2db-498f-49de-b52e-9c134b9cf54d
Uren, M. J.
98cd13fc-b6fa-4126-8ef3-f5fc8be04710
Edwards, C. F., Redman-White, W., Tenbroek, B. M., Lee, M. S. L. and Uren, M. J.
(1997)
The Effect of Body Contact Series Resistance on SOI CMOS Amplifier stages.
IEEE Transactions on Electron Devices, 44 (12), .
Abstract
This paper examines some implications for analogue design of using body ties as a solution to the problem of floating body effects in partially-depleted (PD) SOI technologies. Measurements on H-gate body-tied structures in a 0.7-µm SOI process indicate body-tie series resistances increasing into the M region. Both circuit simulation and measurement results reveal a delayed but sharper kink effect as this resistance increases. The consequences of this effect are shown in the context of a simple amplifier configuration, resulting in severe bias-dependent degradation in the small signal gain characteristics as the body-tie resistance enters the M region. It is deduced that imperfectly body tied devices may be worse for analogue design than using non body-tie at all.
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Published date: December 1997
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 253303
URI: http://eprints.soton.ac.uk/id/eprint/253303
PURE UUID: f6131e86-134e-42f7-b803-85531ec9c896
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Date deposited: 09 Sep 2004
Last modified: 11 May 2023 17:06
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Contributors
Author:
C. F. Edwards
Author:
W. Redman-White
Author:
B. M. Tenbroek
Author:
M. S. L. Lee
Author:
M. J. Uren
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