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The Effect of Body Contact Series Resistance on SOI CMOS Amplifier stages

Edwards, C. F., Redman-White, W., Tenbroek, B. M., Lee, M. S. L. and Uren, M. J. (1997) The Effect of Body Contact Series Resistance on SOI CMOS Amplifier stages IEEE Transactions on Electron Devices, 44, (12), pp. 2290-2294.

Record type: Article


This paper examines some implications for analogue design of using body ties as a solution to the problem of floating body effects in partially-depleted (PD) SOI technologies. Measurements on H-gate body-tied structures in a 0.7-um SOI process indicate body-tie series resistances increasing into the M region. Both circuit simulation and measurement results reveal a delayed but sharper kink effect as this resistance increases. The consequences of this effect are shown in the context of a simple amplifier configuration, resulting in severe bias-dependent degradation in the small signal gain characteriestics as the body-tie resistance enters the M region. It is deduced that imperfectly body tied devices may be worse for analogue design than using non body-tie at all.

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Published date: December 1997
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 253303
PURE UUID: f6131e86-134e-42f7-b803-85531ec9c896

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Date deposited: 09 Sep 2004
Last modified: 18 Jul 2017 09:59

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Author: C. F. Edwards
Author: W. Redman-White
Author: B. M. Tenbroek
Author: M. S. L. Lee
Author: M. J. Uren

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