A Novel EEPROM Cell Based on Trench Technology for Integration Within Power Integrated Circuits
A Novel EEPROM Cell Based on Trench Technology for Integration Within Power Integrated Circuits
236-238
Garner, D M
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Chen, Y
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Sabesan, L
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Amaratunga, G A J
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Blackburn, A
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Clark, J
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Sekiariapuram, S S
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Evans, A G R
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May 2000
Garner, D M
b97aa0fc-757e-4345-ad91-c58031befb40
Chen, Y
a2c3df71-ff09-4f39-b10a-bfaee687623f
Sabesan, L
cd366e5f-39a9-429d-89b4-0d3fc188e78b
Amaratunga, G A J
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Blackburn, A
bcee4783-8ea6-45cf-9f19-219b6e846bab
Clark, J
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Sekiariapuram, S S
a68f1868-ff85-479e-a1a3-9c87b3f28133
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Garner, D M, Chen, Y, Sabesan, L, Amaratunga, G A J, Blackburn, A, Clark, J, Sekiariapuram, S S and Evans, A G R
(2000)
A Novel EEPROM Cell Based on Trench Technology for Integration Within Power Integrated Circuits.
IEE Electron Device Letters, 21, .
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More information
Published date: May 2000
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 253448
URI: http://eprints.soton.ac.uk/id/eprint/253448
PURE UUID: 53450d86-5dc0-4f11-a718-a953bad6d0d2
Catalogue record
Date deposited: 25 Aug 2004
Last modified: 10 Dec 2021 20:33
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Contributors
Author:
D M Garner
Author:
Y Chen
Author:
L Sabesan
Author:
G A J Amaratunga
Author:
A Blackburn
Author:
J Clark
Author:
S S Sekiariapuram
Author:
A G R Evans
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