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A Novel EEPROM Cell Based on Trench Technology for Integration Within Power Integrated Circuits

Garner, D M, Chen, Y, Sabesan, L, Amaratunga, G A J, Blackburn, A, Clark, J, Sekiariapuram, S S and Evans, A G R (2000) A Novel EEPROM Cell Based on Trench Technology for Integration Within Power Integrated Circuits IEE Electron Device Letters, 21, pp. 236-238.

Record type: Article

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Published date: May 2000
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 253448
URI: http://eprints.soton.ac.uk/id/eprint/253448
PURE UUID: 53450d86-5dc0-4f11-a718-a953bad6d0d2

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Date deposited: 25 Aug 2004
Last modified: 18 Jul 2017 09:57

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Contributors

Author: D M Garner
Author: Y Chen
Author: L Sabesan
Author: G A J Amaratunga
Author: A Blackburn
Author: J Clark
Author: S S Sekiariapuram
Author: A G R Evans

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