Activation energy for fluorine transport in amorphous silicon
Activation energy for fluorine transport in amorphous silicon
The transport of ion implanted F in amorphous Si is studied using secondary ion mass spectroscopy and transmission electron microscopy. Significant redistribution of F is observed at temperatures in the range 600°C to 700°C. The measured F depth-profiles are modelled using a simple Gaussian solution to the diffusion equation, and the diffusion coefficient is deduced at each temperature. An activation energy of 2.2eV±0.4eV for F transport is extracted from an Arrhenius plot of the diffusion coefficients. It is shown that the F transport is influenced by implantation induced defects.
3671-3673
Nash, G.R.
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Schiz, J.F.W.
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Marsh, C.D.
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Ashburn, P.
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Booker, G.R.
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1999
Nash, G.R.
8ace4ea4-4cd0-4946-9524-d9fb11f3d12e
Schiz, J.F.W.
9b756d29-6669-42a2-b23a-6f125b945fc9
Marsh, C.D.
bbae42bc-5d2b-42b6-9fff-37104b120b35
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G.R.
14a40fe3-236c-4bf4-b932-cf90ed6404b2
Nash, G.R., Schiz, J.F.W., Marsh, C.D., Ashburn, P. and Booker, G.R.
(1999)
Activation energy for fluorine transport in amorphous silicon.
Applied Physics Letters, 75 (23), .
Abstract
The transport of ion implanted F in amorphous Si is studied using secondary ion mass spectroscopy and transmission electron microscopy. Significant redistribution of F is observed at temperatures in the range 600°C to 700°C. The measured F depth-profiles are modelled using a simple Gaussian solution to the diffusion equation, and the diffusion coefficient is deduced at each temperature. An activation energy of 2.2eV±0.4eV for F transport is extracted from an Arrhenius plot of the diffusion coefficients. It is shown that the F transport is influenced by implantation induced defects.
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2000_Nash_fluorine_diffusion.pdf
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Published date: 1999
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 253691
URI: http://eprints.soton.ac.uk/id/eprint/253691
ISSN: 0003-6951
PURE UUID: a0f04968-47f4-4f44-9c63-00ca424574e8
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Date deposited: 06 Jan 2004
Last modified: 14 Mar 2024 05:28
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Author:
G.R. Nash
Author:
J.F.W. Schiz
Author:
C.D. Marsh
Author:
G.R. Booker
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