Electrical measurement of silicon film and oxide thickness in partially depleted SOI technologies
Electrical measurement of silicon film and oxide thickness in partially depleted SOI technologies
1011 - 1014
Tenbroek, B M
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Redman-White, W
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Lee, M S L
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Uren, M J
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July 1996
Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Lee, M S L
bafc771f-3562-4a77-a7cc-20326d2ba792
Uren, M J
a01d904d-14a4-42f0-a027-631e4e37d4bf
Tenbroek, B M, Redman-White, W, Lee, M S L and Uren, M J
(1996)
Electrical measurement of silicon film and oxide thickness in partially depleted SOI technologies.
Solid-State Electronics, 39 (7), .
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More information
Published date: July 1996
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 253721
URI: http://eprints.soton.ac.uk/id/eprint/253721
ISSN: 0038-1101
PURE UUID: 7e6c62d9-12ee-43fc-a852-39f49f23c1cd
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Date deposited: 26 Jul 2000
Last modified: 08 Jan 2022 08:46
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Contributors
Author:
B M Tenbroek
Author:
W Redman-White
Author:
M S L Lee
Author:
M J Uren
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