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Electrical measurement of silicon film and oxide thickness in partially depleted SOI technologies

Electrical measurement of silicon film and oxide thickness in partially depleted SOI technologies
Electrical measurement of silicon film and oxide thickness in partially depleted SOI technologies
0038-1101
1011 - 1014
Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Lee, M S L
bafc771f-3562-4a77-a7cc-20326d2ba792
Uren, M J
a01d904d-14a4-42f0-a027-631e4e37d4bf
Tenbroek, B M
d7af4b47-9b03-4a16-bac2-f30d4c063643
Redman-White, W
d5376167-c925-460f-8e9c-13bffda8e0bf
Lee, M S L
bafc771f-3562-4a77-a7cc-20326d2ba792
Uren, M J
a01d904d-14a4-42f0-a027-631e4e37d4bf

Tenbroek, B M, Redman-White, W, Lee, M S L and Uren, M J (1996) Electrical measurement of silicon film and oxide thickness in partially depleted SOI technologies. Solid-State Electronics, 39 (7), 1011 - 1014.

Record type: Article

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More information

Published date: July 1996
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 253721
URI: http://eprints.soton.ac.uk/id/eprint/253721
ISSN: 0038-1101
PURE UUID: 7e6c62d9-12ee-43fc-a852-39f49f23c1cd

Catalogue record

Date deposited: 26 Jul 2000
Last modified: 08 Jan 2022 08:46

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Contributors

Author: B M Tenbroek
Author: W Redman-White
Author: M S L Lee
Author: M J Uren

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