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A small signal model for the frequency dependent drain admittance in floating substrate MOSFETs

A small signal model for the frequency dependent drain admittance in floating substrate MOSFETs
A small signal model for the frequency dependent drain admittance in floating substrate MOSFETs
0018-9200
1186 - 1193
Howes, R.
24866d29-c7b9-4861-950b-a4a611fbba9b
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Howes, R.
24866d29-c7b9-4861-950b-a4a611fbba9b
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf

Howes, R. and Redman-White, W. (1992) A small signal model for the frequency dependent drain admittance in floating substrate MOSFETs. IEEE Journal of Solid State Circuits, 27 (8), 1186 - 1193.

Record type: Article

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More information

Published date: August 1992
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 253756
URI: https://eprints.soton.ac.uk/id/eprint/253756
ISSN: 0018-9200
PURE UUID: 5bfbb5bd-a701-4c53-acda-b8828b76cedd

Catalogue record

Date deposited: 07 Aug 2000
Last modified: 18 Jul 2017 09:56

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