Howes, R. and Redman-White, W. (1992) A small signal model for the frequency dependent drain admittance in floating substrate MOSFETs. IEEE Journal of Solid State Circuits, 27 (8), 1186 - 1193.
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Published date: August 1992
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 253756
URI: http://eprints.soton.ac.uk/id/eprint/253756
ISSN: 0018-9200
PURE UUID: 5bfbb5bd-a701-4c53-acda-b8828b76cedd
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Date deposited: 07 Aug 2000
Last modified: 10 Dec 2021 20:34
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Contributors
Author:
R. Howes
Author:
W. Redman-White
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