Substrate crosstalk suppression capability of silicon-on-insulator substrates with buried ground planes (GPSOI)

Hamel, J.S., Stefanou, S., Baine, P., Bain, M., Armstrong, B.M. and Gamble, H.S. (2000) Substrate crosstalk suppression capability of silicon-on-insulator substrates with buried ground planes (GPSOI). IEEE Microwave and Guided Wave Letters, 10 (4), 134-135. (doi:10.1109/75.846923).

Abstract

Experimental s21 transmission cross-talk studies have been conducted on silicon-on-insulator substrates with buried ground planes (GPSOI) where a 2 Ù per square metal-silicide buried ground plane existed between a 15 Ù cm p-type silicon substrate and a 1 ìm thick buried CVD oxide layer. Transmission structures fabricated on GPSOI, where the ground plane was locally grounded electrically, exhibited 50 dB to 30 dB increased isolation over a frequency range of 500 MHz to 50 GHz compared to standard low resistivity (15 to 20 Ù cm ) SOI substrates where no buried ground plane existed. The GPSOI exhibited over 25 dB increased isolation over the same frequency range compared to published data for high resistivity (200 Ù cm ) SOI substrates with no buried ground plane but where capacitive guard rings were used. substrate,crosstalk,isolation

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