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Cross-Talk Suppression Capability of Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI)

Hamel, J.S., Stefanou, S., Baine, P., Bain, M., Armstrong, B.M. and Gamble, H.S. (2000) Cross-Talk Suppression Capability of Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI)

Record type: Other


Experimental s21 transmission cross-talk studies have been conducted on silicon-on-insulator substrates with buried ground planes (GPSOI) where a 2 Ù per square metal-silicide buried ground plane existed between a 15 Ù cm p-type silicon substrate and a 1 ìm thick buried CVD oxide layer. Transmission structures fabricated on GPSOI, where the ground plane was locally grounded electrically, exhibited 50 dB to 30 dB increased isolation over a frequency range of 500 MHz to 50 GHz compared to standard low resistivity (15 to 20 Ù cm ) SOI substrates where no buried ground plane existed. The GPSOI exhibited over 25 dB increased isolation over the same frequency range compared to published data for high resistivity (200 Ù cm ) SOI substrates with no buried ground plane but where capacitive guard rings were used. substrate,crosstalk,isolation

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Published date: April 2000
Additional Information: Organisation: IEEE
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 254462
PURE UUID: c3919475-5747-450f-839c-4f927bf94c8e

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Date deposited: 29 Mar 2001
Last modified: 18 Jul 2017 09:52

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Author: J.S. Hamel
Author: S. Stefanou
Author: P. Baine
Author: M. Bain
Author: B.M. Armstrong
Author: H.S. Gamble

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