Cross-Talk Suppression Capability of Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI)


Hamel, J.S., Stefanou, S., Baine, P., Bain, M., Armstrong, B.M. and Gamble, H.S. (2000) Cross-Talk Suppression Capability of Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI)

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Description/Abstract

Experimental s21 transmission cross-talk studies have been conducted on silicon-on-insulator substrates with buried ground planes (GPSOI) where a 2 Ù per square metal-silicide buried ground plane existed between a 15 Ù cm p-type silicon substrate and a 1 ìm thick buried CVD oxide layer. Transmission structures fabricated on GPSOI, where the ground plane was locally grounded electrically, exhibited 50 dB to 30 dB increased isolation over a frequency range of 500 MHz to 50 GHz compared to standard low resistivity (15 to 20 Ù cm ) SOI substrates where no buried ground plane existed. The GPSOI exhibited over 25 dB increased isolation over the same frequency range compared to published data for high resistivity (200 Ù cm ) SOI substrates with no buried ground plane but where capacitive guard rings were used. substrate,crosstalk,isolation

Item Type: Other
Additional Information: Organisation: IEEE
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 254462
Date :
Date Event
April 2000Published
Date Deposited: 29 Mar 2001
Last Modified: 17 Apr 2017 23:15
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/254462

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